AP2304AGN-HF Advanced Power Electronics Corp., AP2304AGN-HF Datasheet

Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device

AP2304AGN-HF

Manufacturer Part Number
AP2304AGN-HF
Description
Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP2304AGN-HF

Vds
30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
117
Rds(on) / Max(m?) Vgs@4.5v
190
Qg (nc)
3
Qgs (nc)
0.8
Qgd (nc)
1.8
Id(a)
2.5
Pd(w)
1.38
Configuration
Single N
Package
SOT-23

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AP2304AGN-HF
Manufacturer:
Advanced
Quantity:
45 000
Part Number:
AP2304AGN-HF
Manufacturer:
APEC/富鼎
Quantity:
20 000
▼ Simple Drive Requirement
▼ Small Package Outline
▼ Surface Mount Device
▼ RoHS Compliant
V
V
I
I
I
P
T
T
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
Advanced Power MOSFETs utilized advanced processing techniques
to achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The SOT-23 package is widely used for all commercial-industrial
applications.
D
D
DM
STG
J
DS
GS
D
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
SOT-23
3
3
, V
, V
GS
GS
D
@ 10V
@ 10V
G
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
3
Halogen-Free Product
-55 to 150
-55 to 150
Rating
BV
R
I
D
1.38
±20
2.5
30
10
DS(ON)
AP2304AGN-HF
2
DSS
G
Value
90
117mΩ
D
S
200805211
2.5A
Units
℃/W
30V
Unit
W
V
V
A
A
A
1

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AP2304AGN-HF Summary of contents

Page 1

... Symbol Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET D S SOT-23 G Parameter 10V 10V GS 1 Parameter 3 AP2304AGN-HF Halogen-Free Product BV 30V DSS R 117mΩ DS(ON Rating Units 30 V ± ...

Page 2

... AP2304AGN-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...

Page 3

... Fig 2. Typical Output Characteristics 1.8 V =10V G I =2.5A = 1 1.4 1.2 1.0 0.8 0.6 - Fig 4. Normalized On-Resistance 2.05 1.85 1.65 1.45 1.25 -50 1.3 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP2304AGN- =150 C A 10V 6.0V 5.0V 4.0V V =3. Drain-to-Source Voltage ( 100 150 Junction Temperature ( 100 150 ...

Page 4

... AP2304AGN- =2. =24V DS V =20V =15V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Single Pulse 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 d(on) Fig 11 ...

Page 5

... ADVANCED POWER ELECTRONICS CORP. Package Outline : SOT- Part Marking Information & Packing : SOT-23 NAYY SYMBOLS 1.All Dimension Are In Millimeters. 2.Dimension Does Not Include Mold Protrusions. A2 Part Number : NA Date Code : YY YY:2004,2008,2012… YY:2003,2007,2011… YY:2002,2006,2010… ...

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