AP1203AGMT-HF Advanced Power Electronics Corp., AP1203AGMT-HF Datasheet - Page 3

• Manufacturer Part Number: AP1203AGMT-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP1203AGMT-HF

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 12
• Rds(on) / Max(m?) Vgs@4.5v: 22
• Qg (nc): 6
• Qgs (nc): 1.7
• Qgd (nc): 3.6
• Id(a): 37
• Pd(w): 27.8
• Configuration: Single N
• Package: PMPAK 5x6

120
100
30
20
10
80
60
40
20
20
18
16
14
12
10
0
0
8
0.0
0
2
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
T
C
=25
V
o
Reverse Diode
1.0
DS
C
V
V
T
0.4
, Drain-to-Source Voltage (V)
4
SD
GS
j
=150
, Source-to-Drain Voltage (V)
, Gate-to-Source Voltage (V)
o
2.0
C
0.8
6
I
T
D
3.0
C
=15A
=25
T
j
o
=25
C
1.2
8
o
4.0
V
C
G
= 4.0 V
7.0V
9.0V
8.0V
10V
5.0
1.6
10
80
60
40
20
2.0
1.6
1.2
0.8
0.4
1.6
1.2
0.8
0.4
0.0
0
0.0
Fig 4. Normalized On-Resistance
-50
-50
Fig 2. Typical Output Characteristics
Fig 6. Gate Threshold Voltage v.s.
V
I
T
D
G
C
=20A
=10V
=150
v.s. Junction Temperature
Junction Temperature
V
1.0
T
o
DS
T
C
j
0
j
0
, Junction Temperature (
, Drain-to-Source Voltage (V)
, Junction Temperature (
AP1203AGMT-HF
2.0
50
50
3.0
100
o
100
o
C)
V
4.0
C)
G
6.0V
=4.0V
8.0V
7.0V
10V
5.0
150
150
3