AP1203AGMT-HF Advanced Power Electronics Corp., AP1203AGMT-HF Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP1203AGMT-HF

Manufacturer Part Number
AP1203AGMT-HF
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP1203AGMT-HF

Vds
30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
12
Rds(on) / Max(m?) Vgs@4.5v
22
Qg (nc)
6
Qgs (nc)
1.7
Qgd (nc)
3.6
Id(a)
37
Pd(w)
27.8
Configuration
Single N
Package
PMPAK 5x6
▼ Simple Drive Requirement
▼ SO-8 Compatible with Heatsink
▼ Low On-resistance
▼ RoHS Compliant
V
V
I
I
I
I
P
P
E
T
T
Rthj-c
Rthj-a
Data & specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The PMPAK 5x6 package is special for DC-DC converters application
and the foot print is compatible with SO-8 with backside heat sink and
lower profile.
D
D
D
DM
STG
J
DS
GS
D
D
AS
@T
@T
@T
@T
@T
C
A
A
Symbol
Symbol
C
A
=25℃
=70℃
=25℃
=25℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Chip)
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Total Power Dissipation
Single Pulse Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
3
3
4
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
3
Halogen-Free Product
-55 to 150
-55 to 150
S
AP1203AGMT-HF
Rating
BV
R
I
D
S
15.8
12.6
27.8
16.2
+20
150
30
37
DS(ON)
S
5
DSS
G
Value
4.5
25
PMPAK 5x6
D
D
12mΩ
200812241
D
Units
Units
℃/W
℃/W
30V
37A
mJ
W
W
D
V
V
A
A
A
A
1

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AP1203AGMT-HF Summary of contents

Page 1

... Thermal Data Symbol Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter Parameter 3 AP1203AGMT-HF Halogen-Free Product BV 30V DSS R 12mΩ DS(ON) I 37A □ ...

Page 2

... AP1203AGMT-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... V Fig 2. Typical Output Characteristics 2.0 I =20A D V =10V G 1.6 1.2 0.8 0.4 -50 10 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 1 0.8 0.4 0.0 1.6 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP1203AGMT- 10V 8.0V 7.0V 6.0V V =4.0V G 2.0 3.0 4.0 5.0 , Drain-to-Source Voltage ( 100 150 Junction Temperature ( 100 Junction Temperature ( C) j ...

Page 4

... AP1203AGMT- =20A =15V DS V =18V DS V =24V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 = Single Pulse 0 0 ,Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% ...

Page 5

... Package Outline : PMPAK 5x6 Part Marking Information & Packing : PMPAK 5x6 1203AGMT YWWSSS ADVANCED POWER ELECTRONICS CORP. Part Number(1203A) Package Code(GMT) Date Code (YWWSSS) Y:Last Digit Of The Year WW:Week SSS:Sequence If last "S" is numerical letter : Rohs product If last "S" is English letter : HF & Rohs product ...

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