MJD44H11T4-A STMicroelectronics, MJD44H11T4-A Datasheet

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... The devices are manufactured in low voltage multi epitaxial planar technology. They are intended for general purpose linear and switching applications. Table 1. Device summary Order codes Marking MJD44H11T4-A MJD44H11 MJD45H11T4-A MJD45H11 August 2009 MJD44H11T4-A MJD45H11T4-A Complementary power transistors . TAB 2 Figure 1. Internal schematic diagram Polarity Package NPN DPAK ...

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Absolute maximum ratings Table 2. Absolute maximum ratings Symbol V Collector-emitter voltage (I CEO V Emitter-base voltage (I EBO I Collector current C I Collector peak current CM P Total dissipation at T TOT T Storage temperature STG T ...

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Electrical characteristics °C; unless otherwise specified. case Table 4. Electrical characteristics Symbol Collector-emitter (1) V CEO(sus) sustaining voltage (I Collector cut-off current I CES ( Emitter cut-off current I EBO ( ...

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Figure 4. DC current gain (NPN) Figure 6. Collector-emitter saturation voltage (NPN) 4/8 Figure 5. DC current gain (PNP) Figure 7. Collector-emitter saturation voltage (PNP) Doc ID 16095 Rev 1 ...

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Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ® ...

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DIM 6/8 TO-252 (DPAK) mechanical data mm ...

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Revision history Table 5. Document revision history Date 06-Aug-2009 Revision 1 Initial release. Doc ID 16095 Rev 1 Changes 7/8 ...

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... Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...