STB80NF55-06T STMicroelectronics, STB80NF55-06T Datasheet - Page 3

• Manufacturer Part Number: STB80NF55-06T
• Description: N-channel 55 V, 5 mOhm, 80 A STripFET(TM) II Power MOSFET in a D2PAK package
• Manufacturer: STMicroelectronics

STB80NF55-06T
1
Electrical ratings
Table 2.
1. Current limited by package.
2. Pulse width limited by safe operating area.
3. Guaranteed by process.
4. I
5. Starting T
Table 3.
1. When mounted on 1 inch² FR4 2 oz Cu.
Rthj-pcb
Rthj-case
Symbol
Symbol
SD
dv/dt
E
I
P
DM
I
I
V
V
AS
T
D
D
P
P
2
T
DS
GS
stg
≤ 80 A, di/dt ≤ 300 A/µs, V
tot
(1)
(1)
1
(3)
j
(2)
(5)
(4)
(1)
j
= 25 °C, I
Absolute maximum ratings
Thermal data
Thermal resistance junction-case max.
Thermal resistance junction-to pcb max.
Drain-source voltage
Gate- source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Long term load test (I
T
Short term load test (I
T
Derating Factor
Peak diode recovery avalanche energy
Single pulse avalanche energy
Storage temperature
Max. operating junction temperature
pulse
pulse
D
=10 msec) ΔV
=700 msec) ΔV
= 30 A, V
DD
DD
Doc ID 022702 Rev 1
=V(
=30 V
Parameter
Parameter
SD
C
BR)DSS
SD
D
D
= 25 °C
= 100 A, V
(tested)
= 75 A, V
(not tested)
, T
j
C
C
≤ T
= 25 °C
= 100 °C
SD
SD
JMAX
= 15 V,
= 15 V,
-55 to 175
Value
Value
1125
± 20
320
300
150
1.3
0.5
80
80
35
55
2
7
Electrical ratings
W/°C
°C/W
°C/W
V/ns
Unit
Unit
°C
W
W
W
V
V
A
A
A
J
3/15