STFI20NK50Z STMicroelectronics, STFI20NK50Z Datasheet - Page 5

• Manufacturer Part Number: STFI20NK50Z
• Description: N-channel 500 V, 0.23 Ohm, 17 A, Zener-protected SuperMESH(TM) Power MOSFET in I2PakFP
• Manufacturer: STMicroelectronics

STFI20NK50Z
Table 7.
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. Pulse width limited by safe operating area.
Table 8.
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Symbol
V
I
Symbol
V
SDM
I
I
(BR)GSO
RRM
RRM
I
SD
Q
Q
SD
t
t
rr
rr
rr
rr
(2)
(1)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Gate-source breakdown voltage
(I
D
Source drain diode
Gate-source Zener diode
= 0)
Parameter
Parameter
Doc ID 019007 Rev 2
I
I
di/dt = 100 A/µs
V
(see
I
di/dt = 100 A/µs
V
(see
SD
SD
SD
R
R
I
GS
= 100 V
= 100 V, Tj = 150 °C
= 17 A, V
= 17 A,
= 17 A,
Test conditions
Figure 17
Figure 17
= ± 1mA
Test conditions
GS
)
)
= 0
Electrical characteristics
Min.
Min.
-
-
-
-
30
Typ.
3.90
5.72
355
440
22
26
Typ.
-
Max.
Max.
1.6
17
68
Unit
Unit
µC
µC
ns
ns
A
A
V
A
A
V
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