STB20NM60 STMicroelectronics, STB20NM60 Datasheet - Page 3

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STB20NM60

Manufacturer Part Number
STB20NM60
Description
N-Channel 600V - 0.25Ohm - 20A - D2PAK MDmesh MOSFET
Manufacturer
STMicroelectronics
Datasheet

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STB20NM60/-1 - STP20NM60FP - STP20NM60 - STW20NM60
1
Electrical ratings
Table 2.
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I
Table 3.
Table 4.
Rthj-case
Rthj-amb
Symbol
Symbol
Symbol
dv/dt
I
SD
P
DM
V
E
V
V
T
I
T
AS
I
I
TOT
T
ISO
AS
DS
GS
stg
D
D
< 20A, di/dt < 400A/µs, V
l
j
(2)
(3)
Absolute maximum ratings
Thermal resistance
Avalanche data
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose
Avalanche current, repetitive or not-
repetitive (pulse width limited by T
Single pulse avalanche energy
(starting T
Drain-source voltage (V
Gate- source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Peak diode recovery voltage slope
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1s;T
Storage temperature
Max. operating junction temperature
C
=25°C)
j
= 25 °C, I
DD
Parameter
Parameter
Parameter
< V
D
C
(BR)/DSS
= I
= 25°C
GS
AS
= 0)
, V
, Tj < T
DD
C
C
= 25°C
= 100°C
= 50 V)
j
max)
JMAX
TO-220/D²PAK
TO-220/D²PAK
I²PAK/TO-247
I²PAK/TO-247
12.6
192
0.65
1.5
20
80
--
Max. value
-65 to 150
Value
62.5
±30
300
600
150
650
15
10
TO-220FP
TO-220FP
Electrical ratings
12.6
20
80
2500
0.36
45
2.8
(1)
(1)
(1)
W/°C
°C/W
°C/W
Unit
V/ns
Unit
Unit
mJ
°C
°C
°C
W
V
V
A
A
A
V
A
3/18

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