STW24NM60N STMicroelectronics, STW24NM60N Datasheet - Page 4

• Manufacturer Part Number: STW24NM60N
• Description: N-channel 600 V, 0.168 Ohm, 17 A MDmesh(TM) II Power MOSFET TO-247
• Manufacturer: STMicroelectronics

Electrical characteristics
2
4/19
Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Table 5.
Table 6.
1. C
C
V
Symbol
Symbol
R
V
oss eq.
(BR)DSS
increases from 0 to 80% V
C
I
I
C
DS(on)
C
GS(th)
Q
Q
DSS
GSS
Q
R
o(eff).
oss
rss
iss
gs
gd
g
g
(1)
is defined as a constant equivalent capacitance giving the same charging time as C
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Gate input resistance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source
breakdown voltage
(V
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage V
Static drain-source on
resistance
On /off states
Dynamic
GS
= 0)
Parameter
Parameter
DS
= 0)
DS
GS
.
= 0)
STF24NM60N, STI24NM60N, STP24NM60N, STW24NM60N
Doc ID 18047 Rev 3
V
V
V
f=1 MHz open drain
V
V
(see Figure 19)
I
V
V
V
V
D
DS
GS
DS
DD
GS
GS
GS
DS
DS
DS
= 1 mA
= 600 V
= 600 V, T
= 50 V, f = 1 MHz,
= 0
= 0 to 480 V, V
= 10 V
= V
= 480 V, I
= ± 25 V
= 10 V, I
Test conditions
Test conditions
GS
, I
D
D
D
= 250 µA
C
= 8 A
=125 °C
= 17 A,
GS
= 0
Min.
Min.
600
2
-
-
-
-
0.168
1400
Typ.
Typ.
190
7.4
44
46
23
5
7
3
oss
when V
Max.
Max.
0.19
100
100
1
4
-
-
-
-
DS
Unit
Unit
µA
µA
nA
pF
pF
pF
pF
nC
nC
nC
V
V
Ω
Ω