STF2N62K3 STMicroelectronics, STF2N62K3 Datasheet - Page 5

• Manufacturer Part Number: STF2N62K3
• Description: N-channel 620 V, 3 Ohm, 2.2 A, TO-220FP SuperMESH3(TM) Power MOSFET
• Manufacturer: STMicroelectronics

STD/F/P/U2N62K3
Table 6.
Table 7.
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Table 8.
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Symbol
Symbol
Symbol
I
V
BV
SDM
t
t
I
I
SD
d(on)
d(off)
RRM
RRM
I
Q
Q
SD
t
t
t
t
GSO
rr
rr
r
f
rr
rr
(2)
(1)
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Gate-source breakdown
voltage
Switching times
Source drain diode
Gate-source Zener diode
Parameter
Parameter
Parameter
Doc ID 018898 Rev 1
V
R
(see
I
I
V
I
V
(see
Igs=± 1 mA (open drain)
SD
SD
SD
DD
G
DD
DD
= 4.7 Ω, V
= 2.2 A, V
= 2.2 A, di/dt = 100 A/µs
= 2.2 A, di/dt = 100 A/µs
= 310 V, I
= 60 V (see
= 60 V, T
Figure
Figure
Test conditions
Test conditions
Test conditions
19)
24)
GS
j
D
GS
= 150 °C
= 1.1 A,
= 0
= 10 V
Figure
24)
Electrical characteristics
Min.
Min.
Min
30
-
-
-
-
-
1150
Typ.
Typ.
200
900
240
4.4
Typ
21
22
10
8
9
Max. Unit
Max. Unit
Max Unit
2.2
8.8
1.6
-
nC
nC
ns
ns
ns
ns
ns
ns
A
A
V
A
A
5/22
V