STD3PK50Z STMicroelectronics, STD3PK50Z Datasheet - Page 3

• Manufacturer Part Number: STD3PK50Z
• Description: P-channel 500 V, 3 Ohm, 2.8 A DPAK, Zener-protected SuperMESH Power MOSFET
• Manufacturer: STMicroelectronics

STD3PK50Z
1
a. For the P-channel Power MOSFET actual polarity of voltages and current has to be reversed
Electrical ratings
Table 2.
1. Pulse width limited by safe operating area.
2. I
Table 3.
V
Rthj-case
Rthj-pcb
Symbol
Symbol
dv/dt
ESD(G-S)
I
SD
P
DM
V
V
E
T
I
I
I
TOT
AR
T
DS
GS
stg
D
D
AS
j
≤ 2.8 A, di/dt ≤ 200 A/µs, V
(1)
(2)
Absolute maximum ratings
Drain source voltage
Gate- source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Max current during repetitive or single pulse
avalanche (pulse width limited by T
Single pulse avalanche energy
(starting T
Peak diode recovery voltage slope
G-S ESD (HBM C = 100 pF, R = 1.5 kΩ)
Operating junction temperature
Storage temperature
Thermal data
Thermal resistance junction-case max
Thermal resistance junction-pcb max
J
= 25 °C, I
Parameter
Parameter
Peak
(a)
Doc ID 18280 Rev 1
C
D
≤ V
=I
= 25 °C
AS
(BR)DSS
, V
DD
C
C
= 50 V)
= 25 °C
= 100 °C
jmax
)
- 55 to 150
Value
Value
3000
± 30
11.2
TBD
TBD
TBD
1.79
500
2.8
50
70
2
Electrical ratings
°C/W
°C/W
Unit
V/ns
Unit
mJ
°C
W
V
V
A
A
A
A
V
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