STB14NK50Z STMicroelectronics, STB14NK50Z Datasheet - Page 6

• Manufacturer Part Number: STB14NK50Z
• Description: N-Channel 500V - 0.34 Ohm - 14A Zener-Protected SuperMesh(TM) POWER MOSFET
• Manufacturer: STMicroelectronics

Electrical characteristics
6/19
Table 7.
Table 8.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Symbol
I
t
V
SDM
t
r(Voff)
I
d(off)
RRM
I
SD
Q
t
SD
t
t
t
c
f
f
rr
rr
(2)
(1)
Turn-off delay time
Fall time
Off-voltage rise time
Fall time
Cross-over time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
STP14NK50Z - STP14NK50ZFP - STB14NK50Z - STB14NK50Z-1 -
V
R
(see Figure 19)
V
R
(see Figure 21)
I
I
di/dt = 100A/µs,
V
(see Figure 21)
DD
DD
SD
SD
G
G
DD
=4.7Ω, V
=4.7Ω, V
=250V, I
=400 V, I
=12A, V
=12A,
Test conditions
=35V, Tj=150°C
GS
D
GS
GS
D
=6A,
=12A,
=0
=10V
=10V
Min
Typ.
13.2
470
3.1
9.5
54
12
20
9
Max
1.6
12
48
Unit
µC
ns
ns
ns
ns
ns
ns
A
A
V
A