STB11NK50Z STMicroelectronics, STB11NK50Z Datasheet - Page 4

• Manufacturer Part Number: STB11NK50Z
• Description: N-Channel 500V - 0.48 Ohm - 10A - D2PAK Zener-Protected SuperMESH(TM) POWER MOSFET
• Manufacturer: STMicroelectronics

Electrical characteristics
2
4/16
Electrical characteristics
(T
Table 5.
Table 6.
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. C
C
V
Symbol
Symbol
R
CASE
V
oss eq
(BR)DSS
g
C
I
I
increases from 0 to 80% V
DS(on)
C
C
GS(th)
Q
Q
GSS
DSS
fs
Q
oss
oss eq.
rss
iss
gs
gd
g
(1)
(2)
= 25 °C unless otherwise specified)
.
is defined as a constant equivalent capacitance giving the same charging time as C
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
DS
= 0)
Parameter
Parameter
GS
= 0)
DSS
I
V
V
V
V
V
V
V
V
V
V
(see Figure 18)
D
GS
GS
GS
GS
DS
DS
DS
DS
DS
DD
= 1 mA, V
= V
= 10 V, I
=0, V
=400 V, I
= Max rating,
= Max rating @125 °C
= ±20 V
=15 V, I
=25 V, f=1 MHz, V
=10 V
STB11NK50Z - STP11NK50ZFP - STP11NK50Z
Test conditions
Test conditions
GS
DS
, I
D
D
D
=0 to 400 V
GS
D
= 4.5 A
= 100 µA
= 4.5 A
= 11.4 A
= 0
GS
=0
Min.
500
3
Min. Typ. Max.
Typ.
3.75
0.48
1390
173
110
7.7
42
49
10
25
oss
Max.
0.52
when V
±
4.5
50
10
68
1
DS
Unit
Unit
µA
µA
µA
nC
nC
nC
pF
pF
pF
pF
V
V
Ω
S