T1235H-600 STMicroelectronics, T1235H-600 Datasheet - Page 4

• Manufacturer Part Number: T1235H-600
• Description: High-temperature 12 A Snubberless™ Triac
• Manufacturer: STMicroelectronics

T1235H
Figure 7: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width t
and corresponding value of I
Figure 9: Relative variation of critical rate of
decrease of main current versus (dV/dt)c
(typical values)
Figure 11: Leakage current versus junction
temperature for different values of blocking
voltage (typical values)
4/8
1E+1
1E+0
2000
1000
6.0
5.0
4.0
3.0
2.0
1.0
0.0
1E-1
1E-2
1E-3
100
0.1
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
0.01
50
I
I
TSM
DRM
dI/dt limitation:
(A), I t (A s)
50A/µs
/ I
RRM
2
V = V = 200V
D
(mA)
75
2
R
1.0
0.10
V = V = 400V
D
(dV/dt)c (V/µs)
R
t (ms)
p
T (°C)
j
100
V = V = 600V
D
2
t
R
10.0
1.00
125
T initial=25°C
p
j
< 10 ms
I
TSM
I t
2
100.0
10.00
150
Figure 8: Relative variation of gate trigger
current, holding current and latching current
versus junction temperature (typical values)
Figure 10: Relative variation of critical rate of
decrease of main current versus junction
temperature
Figure 12: Acceptable repetitive peak off-state
voltage versus case-ambient thermal resistance
700
600
500
400
300
200
100
2.5
2.0
1.5
1.0
0.5
0.0
8
7
6
5
4
3
2
1
0
25
0
(dI/dt)c [T ] /
-40
I
0
GT H L
V
DRM
I
,I ,I [T ] /
H
& I
-20
L
2
/ V
j
I
GT
50
RRM
j
(dI/dt)c [T = 150°C
0
4
I
GT H L
(V)
,I ,I [T =25°C]
20
6
j
75
40
R
j
8
th(c-a)
T (°C)
T (°C)
j
j
60
10
(°C/W)
]
100
80
12
100
14
125
120
R
th(j-c)
16
T = 150°C
j
= 1.2°C/W
140
18
160
150
20