T850H STMicroelectronics, T850H Datasheet - Page 4

• Manufacturer Part Number: T850H
• Description: High-temperature 8A Triacs
• Manufacturer: STMicroelectronics

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Figure 1.
Figure 3.
Figure 5.
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
100
9
8
7
6
5
4
3
2
1
0
10
1
0
0.0
0
=180 °
0.5
1
25
T
Maximum power dissipation versus
on-state rms current (full cycle)
ambient temperature
On-state characteristics
(maximum values)
On-state rms current versus
j
=150 °C
1.0
Epoxy printed circuit board FR4,
2
copper thickness = 35 µm
1.5
50
T
j
3
=25 °C
2.0
T
I
T(RMS)
amb
V
TM
75
4
(°C)
(V)
(A)
2.5
5
100
3.0
6
3.5
V
R
t0
T
d
125
j
= 52 m
= 0.80 V
max. :
S
CU
D²PAK
=180 °
4.0
Doc ID 13564 Rev 2
7
=1 cm²
180°
150
4.5
8
Figure 2.
Figure 4.
Figure 6.
90
80
70
60
50
40
30
20
10
9
8
7
6
5
4
3
2
1
0
1.0E+02
1.0E+01
1.0E+00
1.0E-01
0
0
1
1.0E-03
=180 °
25
Repetitive
T
c
=125 °C
1.0E-02
On-state rms current versus case
temperature (full cycle)
Variation of thermal impedance
versus pulse duration
Surge peak on-state current versus
number of cycles
T
Non repetitive
j
initial=25 °C
50
10
1.0E-01
Number of cycles
T
C
(°C)
1.0E+00
75
t
P
(s)
TO-220AB
Insulated
1.0E+01
100
100
Z
th(j-a)
Z
th(j-c)
TO-220AB/D²PAK
1.0E+02
t=20ms
One cycle
125
1.0E+03
1000
150