TN1205T-600 STMicroelectronics, TN1205T-600 Datasheet - Page 2

• Manufacturer Part Number: TN1205T-600
• Description: 12A SCRs
• Manufacturer: STMicroelectronics

Characteristics
1
Table 2.
1. T
Table 3.
1. T
2/8
Symbol
Symbol
I
P
T(RMS)
dV/dt
I
I
I
I
di/dt
T(AV)
V
V
T
V
I
V
DRM
RRM
TSM
G(AV)
I
t
I
R
GM
GT
I
GT
2
T
I
t
GT
GD
TM
stg
j
H
T0
j
L
q
T
d
j
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
On-state rms current (180 °C conduction angle)
Average on-state current(180 °C conduction angle)
Non repetitive surge peak on-state current
I
Critical rate of rise of on-state current
I
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
V
V
V
I
I
V
Gate controlled turn on time
I
dI
Circuit commutated turn off time
V
dI
I
Threshold voltage
Dynamyc restistance
V
2
G
T
G
TM
TM
D
D
D
D
D
DRM
T value for fusing
G
T
= 500 mA gate open
= 2 x I
= 1.2 I
/dt = 30 A/µS, dV
Characteristics
Absolute ratings
Electrical characteristics
/dt = 5 A/µs, R
= 12 V, R
= 12 V, R
= V
= 67% V
= 67% V
= 40 A, V
= 24 A, T
= V
DRM,
GT
GT
RRM
, tr ≤ 100 ns
DRM(MAX)
R
L
L
DRM
p
D
L
= 33 Ω
= 33 Ω
= 380 µs
= V
= 3.3 kΩ
G
gate open
DRM(MAX)
= 68 Ω
D
, T
/dt = 50 V/µs, R
(1)
j
Test conditions
= 125 °C, I
, I
GT
(1)
= 100 mA
Parameter
TM
Doc ID 16339 Rev 1
GK
= 20 A, V
= 100 Ω
R
= 25 V
T
T
T
T
T
T
F = 60 Hz
t
p
j
j
j
j
j
j
= 125 °C
= 125 °C
= 125 °C
= 125 °C
= 25 °C
= 125 °C
= 20 µs
T
T
t
t
t
T
T
T
p
p
p
c
c
j
c
j
Min.
100
0.2
= 8.3 ms
= 10 ms
= 10 ms
= 125 °C
= 125 °C
= 103 °C
= 103 °C
= 125 °C
2
Typ.
1.2
55
-40 to + 150
-40 to + 125
Value
120
115
12
66
50
8
4
1
Max.
0.85
1.3
1.6
15
30
30
TN1205T-600
5
5
2
Unit
A/µs
Unit
V/µs
A
mΩ
mA
mA
mA
mA
µA
°C
µs
µs
W
A
A
A
A
V
V
V
V
2
s