TS820 STMicroelectronics, TS820 Datasheet - Page 4

• Manufacturer Part Number: TS820
• Description: 8A sensitive gate SCRs
• Manufacturer: STMicroelectronics

Characteristics
4/13
Figure 3.
Figure 5.
Figure 7.
1.00
0.10
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
2,5
2,0
1,5
1,0
0,5
0,0
0.01
-40
0
I
1E-2
I
T(AV)
GT H L
K=[Z
,I ,I [T ] /
I
Recommended pad layout,
FR4 printed circuit board
H
& I
(A)
-20
th(j-a)
L
D.C.
I
GT
25
j
Average and DC on-state current
versus ambient temperature
Relative variation of thermal
impedance junction to ambient
versus pulse duration
Relative variation of gate trigger
and holding current versus junction
temperature
/R
1E-1
0
DPAK
IPAK
I
th(j-a)
GT H L
= 180°
,I ,I [T =25°C]
20
]
50
DPAK
1E+0
j
40
T (°C)
t (s)
j
p
T
amb
TO-220AB / IPAK
TO-220FPAB
60
(°C)
Recommended pad layout,
FR4 printed circuit board
TO-220AB
75
TO-220FPAB
1E+1
80
TN8 and TYNx8
100
100
1E+2
Doc ID 7476 Rev 7
120
5E+2
125
140
Figure 4.
Figure 6.
Figure 8.
1.0
0.5
0.2
0.1
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1E-2
-40
1E-3
I [R
K=[Z
I
H
GT H L
TS8
,I ,I [T ] /
GK
th(j-c)
R
-20
GK
I
H
] / I [
& I
= 1k
I
GT
L
/R
H
j
Relative variation of thermal
impedance junction to case versus
pulse duration
Relative variation of gate trigger
current and holding current versus
junction temperature for TS820
Relative variation of holding
current versus gate-cathode
resistance (typical values)
R
th(j-c)
0
I
GK
GT H L
=1k ]
,I ,I [T =25°C]
]
1E-1
1E-2
20
TN805, TN815, TS820, TYN608
j
R
40
T (°C)
GK
t (s)
j
p
(k )
60
1E+0
1E-1
80
100
T
j
= 25°C
120
1E+0
1E+1
140