STM8S003K3 STMicroelectronics, STM8S003K3 Datasheet - Page 66

• Manufacturer Part Number: STM8S003K3
• Description: Value line, 16 MHz STM8S 8-bit MCU, 8 Kbytes Flash, 128 bytes data EEPROM
• Manufacturer: STMicroelectronics

Specifications of STM8S003K3

• Program Memory: 8 Kbytes Flash; data retention 20 years at 55 °C after 100 cycles
• Data Memory: 128 bytes of true data EEPROM; endurance up to 100 000 write/erase cycles
• Ram: 1 Kbytes
• Advanced Control Timer: 16-bit, 4 CAPCOM channels, 3 complementary outputs, dead-time insertion and flexible synchronization

Electrical characteristics
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Symbol
V
V
V
R
t
I
I
I
(1)
tested in production.
(2)
R
lkg
lkg ana
lkg(inj)
IL
IH
hys
pu
, t
Data based on characterisation results, not tested in production.
Hysteresis voltage between Schmitt trigger switching levels. Based on characterization results, not
F
I/O port pin characteristics
General characteristics
Subject to general operating conditions for V
pins must be kept at a fixed voltage: using the output mode of the I/O for example or an
external pull-up or pull-down resistor.
Parameter
Input low level voltage
Input high level voltage
Hysteresis
Pull-up resistor
Rise and fall time
(10 % - 90 %)
Digital input leakage current
Analog input leakage current
Leakage current in adjacent
I/O
(1)
(2)
even when a write/erase operation addresses a single byte.
Data based on characterization results, not tested in production.
The physical granularity of the memory is 4 bytes, so cycling is performed on 4 bytes
(1)
Table 37: I/O static characteristics
Conditions
DocID018576 Rev 2
V
V
Fast I/Os
Load = 50 pF
Standard and high sink
I/Os
Load = 50 pF
V
V
Injection current ±4 mA
DD
DD
SS
SS
≤ V
≤ V
= 5 V
= 5 V, V
IN
IN
≤V
≤ V
IN
DD
DD
DD
= V
and T
SS
A
unless otherwise specified. All unused
Min
-0.3 V
0.7 x
V
30
DD
STM8S003K3 STM8S003F3
Typ
700
55
Max
0.3 x
V
V
0.3
80
20
125
±1
±250
±1
DD
DD
(2)
(2)
(2)
(2)
+
(2)
Unit
V
mV
kΩ
ns
μA
nA
μA