STM8AF62A9 STMicroelectronics, STM8AF62A9 Datasheet - Page 105
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STM8AF62A9
Manufacturer Part Number
STM8AF62A9
Description
STM8AF62 Standard Line
Manufacturer
STMicroelectronics
Datasheet
1.STM8AF5168.pdf
(106 pages)
Specifications of STM8AF62A9
Max Fcpu
24 MHz
Program Memory
32 to 128 Kbytes Flash program; data retention 20 years at 55 °C
Data Memory
up to 2 Kbytes true data EEPROM; endurance 300 kcycles
Ram
2 Kbytes to 6 Kbytes
Advanced Control Timer
16-bit, 4 CAPCOM channels, 3 complementary outputs, dead-time insertion and flexible synchronization
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STM8AF52/62xx, STM8AF51/61xx
Table 55.
3&-Jan-2011
Date
Document revision history (continued)
(continued)
Revision
Rev 8
Renamed Fast Active Halt mode to Active-halt mode with regulator
on, and Slow Active Halt mode to Active-halt mode with regulator off,
updated
Total current consumption in Halt and Active-halt modes. General
conditions for V
stated. I
renamed t
Removed note 1 in
1 below
Removed note 3 in
and Slow mode. General conditions for V
150
Removed note 2 in
Table 36: Flash program memory/data EEPROM
Removed note 1 in
value in
memory.
Added t
characteristics.
Added recommendation concerning NRST pin level, and power
consumption sensitive applications, above
Recommended reset pin
value.
Update
specifications.
Updated
Moved know limitations to separate errata sheet.
Added “not recommended for new design” note to device family 51,
memory size 7 and 9, and temperature range B, in
Ordering information
Added Raisonance compiler in
Doc ID 14395 Rev 8
°C.
IFP(NRST)
DD(FAH)
Note 1
Figure 10: f
Table 37: Flash program memory
Section 5.6: Low-power operating
Note 1
WU(AH)
in
DD
and I
in
.
and renamed V
Table 41: TIM 1, 2, 3, and 4 electrical
Table 42: SPI
applied. T
Table 25: General operating
Table 27: Total current consumption in Run, Wait
Table 32: HSE external clock characteristics
Table 38: Data
CPUmax
DD(SAH)
scheme.
protection, and updated external capacitor
versus V
renamed I
A
Changes
= -40 °C to 55 °C unless otherwise
Section 13.2: Software
F(NRST)
characteristics.
memory. Modified T
DD
DD(AH);
.
t
IFP
and
DD
Figure 38:
modes, and
in
apply, T
t
Table 38: Data
Table 40: NRST pin
WU(FAH)
conditions, and note
memory.
Revision history
Figure 48:
A
WE
= -40 °C to
tools.
and t
Table 28:
maximum
WU(SAH)
105/106
and
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