STM8AF6269 STMicroelectronics, STM8AF6269 Datasheet - Page 72
STM8AF6269
Manufacturer Part Number
STM8AF6269
Description
STM8AF62 Standard Line
Manufacturer
STMicroelectronics
Datasheet
1.STM8AF5168.pdf
(106 pages)
Specifications of STM8AF6269
Max Fcpu
16 MHz
Flash Program Memory
16 to 32 Kbytes Flash; data retention 20 years at 55 °C after 1 kcycle
Data Memory
0.5 to 1 Kbyte true data EEPROM; endurance 300 kcycles
Ram
1 to 2 Kbytes
Advanced Control Timer
16-bit, 4 CAPCOM channels, 3 complementary outputs, dead-time insertion and flexible synchronization
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Electrical characteristics
10.3.6
Table 39.
1. Hysteresis voltage between Schmitt trigger switching levels. Based on characterization results, not tested in production.
2. Data based on characterization results, not tested in production.
72/106
Symbol
I
I
lkg ana
I
t
lkg(inj)
V
V
V
DDIO
R
R
V
V
I
lkg
hys
OH
OL
, t
pu
IH
IL
F
Low-level input voltage
High-level input voltage
Hysteresis
High-level output voltage
Low-level output voltage
Pull-up resistor
Rise and fall time
(10% - 90%)
Digital input pad leakage
current
Analog input pad leakage
current
Leakage current in
adjacent I/O
Total current on either
V
DDIO
I/O port pin characteristics
General characteristics
Subject to general operating conditions for V
unused pins must be kept at a fixed voltage, using the output mode of the I/O for example or
an external pull-up or pull-down resistor.
I/O static characteristics
or V
Parameter
(1)
SSIO
(2)
Standard and high sink I/Os
Including injection currents
Standard I/0, V
Standard I/0, V
High sink and true open
Standard I/0, V
Standard I/0, V
Injection current ±4 mA
-40 °C < T
-40 °C < T
V
drain I/0, V
V
DD
V
V
SS
SS
SS
Load = 50 pF
Load = 50 pF
Conditions
= 5 V, V
Doc ID 14395 Rev 8
I = 1.5 mA
I = 1.5 mA
≤
Fast I/Os
≤
≤
I = 3 mA
I = 8 mA
I = 3 mA
V
V
V
—
IN
IN
A
IN
A
DD
< 125 °C
< 150 °C
≤
≤
≤
IN
DD
DD
DD
DD
= 5 V
= V
V
V
V
DD
DD
= 5 V,
= 3 V,
= 5 V
= 3 V
DD
SS
DD
and T
V
V
0.7 x V
DD
DD
-0.3 V
A
Min
35
—
—
—
—
—
—
—
—
—
—
—
- 0.5 V
- 0.4 V
unless otherwise specified. All
STM8AF52/62xx, STM8AF51/61xx
DD
0.1 x
V
Typ
50
—
—
—
—
—
—
—
—
—
—
—
—
DD
V
0.3 x V
DD
125
±250
±500
20
±1
Max
0.5
0.6
0.4
+ 0.3 V
65
±1
60
—
—
—
(2)
(2)
(2)
DD
Unit
mA
kΩ
µA
nA
µA
—
ns
V