STM32F215ZE STMicroelectronics, STM32F215ZE Datasheet - Page 114
STM32F215ZE
Manufacturer Part Number
STM32F215ZE
Description
High-performance ARM Cortex-M3 MCU with 512 Kbytes Flash, 120 MHz CPU, ART Accelerator, HW crypto
Manufacturer
STMicroelectronics
Datasheet
1.STM32F215ZG.pdf
(168 pages)
Specifications of STM32F215ZE
10/100 Ethernet Mac With Dedicated Dma
supports IEEE 1588v2 hardware, MII/RMII
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Electrical characteristics
Table 62.
1. TBD stands for “to be defined”.
2. It is recommended to maintain the voltage difference between V
3. Based on characterization, not tested in production.
4. V
5. R
6. For external triggers, a delay of 1/f
114/168
I
I
VREF+
DDA
Symbol
f
S
REF+
ADC
(3)
(3)
(3)
maximum value is given for V
is internally connected to V
Sampling rate
(f
ADC V
consumption in conversion mode
ADC VDDA DC current
consumption in conversion mode
ADC
ADC characteristics
Equation 1: R
The formula above
allowed for an error below 1/4 of LSB. N = 12 (from 12-bit resolution) and k is the number of
sampling periods defined in the ADC_SMPR1 register.
= 30 MHz)
REF
DC current
Parameter
AIN
DDA
PCLK2
max formula
DD
(Equation
=1.8 V, and minimum value for V
and V
(1)
must be added to the latency specified in
(continued)
REF-
R
AIN
is internally connected to V
1) is used to determine the maximum external impedance
Doc ID 17050 Rev 6
Interleave Triple ADC
Interleave Dual ADC
=
480 sampling time
480 sampling time
12-bit resolution
12-bit resolution
12-bit resolution
12-bit resolution
12-bit resolution
12-bit resolution
12-bit resolution
3 sampling time
3 sampling time
f
f
f
f
ADC
ADC
ADC
ADC
------------------------------------------------------------- - R
f
Single ADC
Conditions
ADC
mode
mode
= 30 MHz
= 30 MHz
= 30 MHz
= 30 MHz
×
C
(
REF+
k 0.5
ADC
–
and V
×
DD
ln
=3.3 V.
)
DDA
(
SSA
2
N
below 1.8 V.
.
+
2
Table
Min
)
-
-
-
-
-
-
-
–
STM32F215xx, STM32F217xx
62.
ADC
Typ
300
1.6
-
-
-
-
-
TBD
TBD
Max
3.75
500
1.8
2
6
Msps
Msps
Msps
Unit
mA
µA
µA
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