STTH12012TV STMicroelectronics, STTH12012TV Datasheet

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STTH12012TV

Manufacturer Part Number
STTH12012TV
Description
Ultrafast recovery - 1200 V diode
Manufacturer
STMicroelectronics
Datasheet

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Main product characteristics
Features and benefits
Description
The high quality design of this diode has
produced a device with low leakage current,
regularly reproducible characteristics and intrinsic
ruggedness. These characteristics make it ideal
for heavy duty applications that demand long term
reliability.
Such demanding applications include industrial
power supplies, motor control, and similar
mission-critical systems that require rectification
and freewheeling. These diodes also fit into
auxiliary functions such as snubber, bootstrap,
and demagnetization applications.
The improved performance in low leakage
current, and therefore thermal runaway guard
band, is an immediate competitive advantage for
this device.
March 2006
Ultrafast, soft recovery
Very low conduction and switching losses
High frequency and/or high pulsed current
operation
High reverse voltage capability
High junction temperature
Insulated package:
Electrical insulation = 2500 V
Capacitance = 45 pF
V
t
rr
V
I
F
F(AV)
RRM
(typ)
T
(typ)
j
RMS
2 x 60 A
1200 V
150° C
1.30 V
50 ns
Rev 1
Ultrafast recovery - 1200 V diode
Order codes
STTH12012TV
A2
STTH12012TV1
STTH12012TV2
Part Number
K2
K1
K2
A1
A2
A1
K1
STTH12012TV
ISOTOP
STTH12012TV2
K1
STTH12012TV1
STTH12012TV2
www.st.com
A2
A2
K2
Marking
A1
A1
K1
K2
1/8
8

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STTH12012TV Summary of contents

Page 1

... March 2006 Ultrafast recovery - 1200 V diode 1200 V 150° 1.30 V STTH12012TV Order codes Part Number RMS STTH12012TV1 STTH12012TV2 Rev 1 STTH12012TV STTH12012TV2 ISOTOP Marking STTH12012TV1 STTH12012TV2 www.st.com 1/8 8 ...

Page 2

... 125° 25° 125° 150° (RMS) STTH12012TV Value 1200 150 = 45° C per diode 60 c 600 420 - 150 150 Value 0.74 0.42 °C/W 0 th(c) Min. Typ Max. 30 RRM ...

Page 3

... STTH12012TV Table 4. Dynamic characteristics Symbol Parameter t Reverse recovery time rr I Reverse recovery current RM S Softness factor t Forward recovery time fr V Forward recovery voltage FP Figure 1. Conduction losses versus average current P(W) 160 δ=0.05 δ=0.2 δ=0.1 140 120 100 (A) F(AV ...

Page 4

... Figure F(AV) 1.75 V =600V R T =125°C j 1.50 1.25 1.00 0.75 0.50 0.25 0.00 25 300 350 400 450 500 STTH12012TV Peak reverse recovery current versus dI /dt (typical values) F (A) =600V R I =125° F(AV) F( F(AV) F(AV) dI /dt(A/µ ...

Page 5

... STTH12012TV Figure 9. Transient peak forward voltage versus dI /dt (typical values ( F(AV) T =125° /dt(A/µ 100 200 Figure 11. Junction capacitance versus reverse voltage applied (typical values) C(pF) 1000 100 V ( Figure 10. Forward recovery time versus dI ...

Page 6

... JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK trademark. ECOPACK specifications are available at: www.st.com. 6 Ø STTH12012TV DIMENSIONS REF. Millimeters Inches Min. Max Min. A 11.80 12.20 0.465 A1 8.90 9.10 0.350 B 7 ...

Page 7

... STTH12012TV 3 Ordering information Part Number STTH12012TV1 STTH12012TV2 4 Revision history Date 02-Mar-2006 Marking Package STTH12012TV1 ISOTOP STTH12012TV2 ISOTOP Revision 1 First issue. Ordering information Weight Base qty Delivery mode Tube Tube Description of Changes 7/8 ...

Page 8

... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 8/8 Please Read Carefully: time, without notice. SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. liability of ST. © 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com STTH12012TV ...

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