STTH6010 STMicroelectronics, STTH6010 Datasheet

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STTH6010

Manufacturer Part Number
STTH6010
Description
Ultrafast recovery - high voltage diode
Manufacturer
STMicroelectronics
Datasheet

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Main product characteristics
Features and benefits
Description
The high quality design of this diode has
produced a device with low leakage current,
regularly reproducible characteristics and intrinsic
ruggedness. These characteristics make it ideal
for heavy duty applications that demand long term
reliability.
Such demanding applications include industrial
power supplies, motor control, and similar
mission-critical systems that require rectification
and freewheeling. These diodes also fit into
auxiliary functions such as snubber, bootstrap,
and demagnetization applications.
The improved performance in low leakage
current, and therefore thermal runaway guard
band, is an immediate competitive advantage for
this device.
March 2006
Ultrafast, soft recovery
Very low conduction and switching losses
High frequency and/or high pulsed current
operation
High reverse voltage capability
High junction temperature
V
t
V
rr
I
F
F(AV)
RRM
(typ)
T
(typ)
j
1000 V
175° C
49 ns
1.3 V
60 A
Ultrafast recovery - high voltage diode
Rev 1
Order codes
Part Number
STTH6010W
A
STTH6010W
DO-247
K
STTH6010
K
A
STTH6010W
Marking
www.st.com
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STTH6010 Summary of contents

Page 1

... March 2006 Ultrafast recovery - high voltage diode 60 A 1000 V 175° Order codes Part Number STTH6010W Rev 1 STTH6010 DO-247 STTH6010W Marking STTH6010W www.st.com 1/8 8 ...

Page 2

... RRM T = 125° 25° 100° 150° (RMS) STTH6010 Value Unit 1000 75° 450 A 400 A - 175 °C 175 °C Value Unit 0.78 °C/W Min. ...

Page 3

... STTH6010 Table 4. Dynamic characteristics Symbol Parameter t Reverse recovery time rr I Reverse recovery current RM S Softness factor t Forward recovery time fr V Forward recovery voltage FP Figure 1. Conduction losses versus average current P(W) 140 120 =0.2 100 =0.1 =0. (A) F(AV Figure 3. Relative variation of thermal ...

Page 4

... F(AV) T =125° F(AV) dI /dt(A/µ 100 150 200 250 300 350 400 Relative variations of dynamic parameters versus junction temperature S factor Reference (° 100 STTH6010 I =0 F(AV) 450 500 F(AV) V =600V R =125°C j 125 ...

Page 5

... STTH6010 Figure 9. Transient peak forward voltage versus dI /dt (typical values ( F(AV =125° /dt(A/µ 100 200 Figure 11. Junction capacitance versus reverse voltage applied (typical values) C(pF) 1000 100 Figure 10. Forward recovery time versus dI ...

Page 6

... V V2 Dia. DIMENSIONS Millimeters Min. Max Min. 4.85 5.15 0.191 2.20 2.60 0.086 0.40 0.80 0.015 1.00 1.40 0.039 2.00 2.00 2.40 0.078 10.90 15.45 15.75 0.608 L 19.85 20.15 0.781 3.70 4.30 0.145 18.50 14.20 14.80 0.559 34.60 5.50 2.00 3.00 0.078 5° 60° 3.55 3.65 0.139 STTH6010 Inches Max. 0.203 0.102 0.031 0.055 0.078 0.094 0.429 0.620 0.793 0.169 0.728 0.582 1.362 0.216 0.118 5° 60° 0.143 ...

Page 7

... STTH6010 3 Ordering information Part Number STTH6010W 4 Revision history Date 02-Mar-2006 Marking Package STTH6010W DO-247 Revision 1 First issue. Ordering information Weight Base qty Delivery mode 30 Tube 4.4 g Description of Changes 7/8 ...

Page 8

... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 8/8 Please Read Carefully: © 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com STTH6010 ...

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