STTH802 STMicroelectronics, STTH802 Datasheet - Page 2
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STTH802
Manufacturer Part Number
STTH802
Description
Ultrafast recovery diode
Manufacturer
STMicroelectronics
Datasheet
1.STTH802.pdf
(11 pages)
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Characteristics
1
Table 1.
Table 2.
Table 3.
1. Pulse test: t
2. Pulse test: t
2/11
Symbol
V
Symbol
I
Symbol
R
R
I
F
F(RMS)
V
I
(1)
(2)
I
th(j-c)
F(AV)
T
FSM
RRM
T
stg
j
Reverse leakage current
Forward voltage drop
p
p
Characteristics
Absolute ratings (limiting values at T
Thermal parameters
Static electrical characteristics
To evaluate the conduction losses use the following equation:
P = 0.73 x I
= 5 ms, δ < 2 %
= 380 µs, δ < 2 %
Junction to case
Repetitive peak reverse voltage
RMS forward current
Average
forward
current, δ = 0.5
Surge non
repetitive
forward current
Storage temperature range
Maximum operating junction temperature
Parameter
F(AV)
+ 0.021 I
TO-220A, DPAK, D
TO-220FPAC
t
p
= 10 ms Sinusoidal
F
2
Parameter
(RMS)
Parameter
T
T
T
T
j
j
j
j
= 25° C
= 125° C
= 25° C
= 150° C
TO-220AC, DPAK, D
TO-220FPAC
2
PAK
Test conditions
j
= 25° C, unless otherwise specified)
V
I
F
R
T
T
= 8 A
= V
c
c
= 145° C
= 125° C
RRM
2
PAK
Min.
-65 to + 175
Value
200
100
175
16
8
0.95
Typ
0.8
6
Value
3.2
5.5
Max.
1.05
0.90
60
6
STTH802
Unit
° C
° C
V
A
A
A
° C/W
Unit
Unit
µA
V