STTH20002TV STMicroelectronics, STTH20002TV Datasheet

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STTH20002TV

Manufacturer Part Number
STTH20002TV
Description
High Efficiency Ultrafast Diode
Manufacturer
STMicroelectronics
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STTH20002TV
Manufacturer:
ST
0
Part Number:
STTH20002TV1
Manufacturer:
STMicroelectronics
Quantity:
200
Part Number:
STTH20002TV1
Manufacturer:
STMicroelectronics
Quantity:
97
Part Number:
STTH20002TV2
Manufacturer:
ST
0
Part Number:
STTH20002TVI
Manufacturer:
ST
0
MAIN PRODUCT CHARACTERISTICS
FEATURES AND BENEFITS
DESCRIPTION
Dual rectifier suited for welding equipment, high
power industrial application.
Packaged in Isotop, this device is intended for use
in the secondary rectification of the applications.
ABSOLUTE RATINGS (limiting values, per diode)
Order Codes
July 2004
STTH20002TV1
Symbol
I
V
F(RMS)
I
I
Suited for SMPS
Very Low Forward Losses
Low recovery time
High surge current capability
Insulated:
Insulating voltage=2500V
Capacitance = 55pF
F(AV)
T
FSM
RRM
T
stg
j
Part Number
V
t
rr
V
I
F
F(AV)
RRM
Repetitive peak reverse voltage
RMS forward voltage
Average forward current
δ = 0.5
Surge non repetitive forward current
Storage temperature range
Maximum operating junction temperature
®
(typ)
T
(typ)
j
TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER
STTH20002TV1
RMS
Up to 2 x 120 A
Marking
0.75 V
150°C
200 V
41 ns
Parameter
REV. 2
tp = 10ms sinusoidal
Tc = 95°C
Tc = 80°C
Per diode
Per diode
K2
STTH20002TV1
STTH20002TV
A1
A2
ISOTOP
A2
K1
-55 to + 150
K1
K2
Value
1000
A1
200
170
100
120
150
Unit
°C
°C
V
A
A
A
1/5

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STTH20002TV Summary of contents

Page 1

... Part Number STTH20002TV1 STTH20002TV1 July 2004 200 V 150°C 0. Parameter Tc = 95° 80° 10ms sinusoidal Marking REV. 2 STTH20002TV ISOTOP STTH20002TV1 Value Unit 200 V 170 A Per diode 100 A Per diode 120 1000 A - 150 °C 150 °C 1/5 ...

Page 2

... STTH20002TV THERMAL RESISTANCE Symbol R Junction to case th(j-c) R Coupling th(c) When the diodes 1 and 2 are used simultaneously: ∆ Tj(diode 1) = P(diode (Per diode) + P(diode th(j-c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter I * Reverse leakage current Forward voltage drop F δ Pulse test ms, < ...

Page 3

... STTH20002TV Fig. 1: Peak current versus duty cycle (per diode). I (A) M 600 500 P = 80W 400 300 P = 120W 200 100 δ 0 0.0 0.1 0.2 0.3 0.4 0.5 Fig. 2-2: Forward voltage drop versus forward current (maximum values, per diode). I (A) FM 200 180 160 140 T =150°C j 120 100 ...

Page 4

... V =160V R 1 0.6 0.4 0.2 T (° 100 ® /dt Fig. 7: Peak reverse recovery current versus dI F (typical values, per diode =100A F V =160V 1000 125 150 STTH20002TV / =125° =25° /dt(A/µs) F 100 1000 4/5 ...

Page 5

... STTH20002TV PACKAGE MECHANICAL DATA ISOTOP ORDERING INFORMATION Ordering type Marking STTH20002TV1 STTH20002TV1 ■ Epoxy meets UL94, V0 ■ Cooling method: by conduction (C) REVISION HISTORY Table 1: Revision history Date Revision 26-May-2004 13-Jul-2004 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use ...

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