STPSC1006 STMicroelectronics, STPSC1006 Datasheet - Page 4

• Manufacturer Part Number: STPSC1006
• Description: 600 V power Schottky silicon carbide diode
• Manufacturer: STMicroelectronics

Characteristics
Figure 7.
4/8
Figure 5.
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.E-05
Single pulse
1.E-04
Total capacitive charge versus dI
Relative variation of thermal
impedance junction to case
versus pulse duration
1.E-03
1.E-02
t
p
(s)
18
16
14
12
10
8
6
4
2
0
0
1.E-01
V
Tj=150 °C
50
I
R
F
=400 V
=10A
1.E+00
100
Doc ID 16287 Rev 3
150
1.E+01
200
F
/dt (typical values)
dI
F
/dt(A/µs)
250
Figure 6.
1.E+03
1.E+02
1.E+01
1.E+00
300
1.E-05
350
400
Non-repetitive peak surge forward
current versus pulse duration
(sinusoidal waveform)
1.E-04
450
500
1.E-03
T
c
=125 °C
t
p
(s)
T
c
1.E-02
=25 °C
1.E-01
STPSC1006
1.E+00