STPS30H100C STMicroelectronics, STPS30H100C Datasheet - Page 2

• Manufacturer Part Number: STPS30H100C
• Description: High Voltage Power Schottky Rectifier
• Manufacturer: STMicroelectronics

Characteristics
1
2/10
Characteristics
Table 2.
1.
Table 3.
When the diodes 1 and 2 are used simultaneously:
ΔT
Table 4.
1. Pulse test: t
2. Pulse test: t
To evaluate the conduction losses use the following equation:
P = 0.54 x I
Symbol
Symbol
R
Symbol
R
I
V
j
I
V
F(RMS)
I
P
dV/dt
(diode 1) = P(diode1) x R
th(j-c)
I
R
I
I
dPtot
---------------
th(c)
F(AV)
T
F
RRM
RSM
FSM
RRM
ARM
dTj
(1)
T
(2)
stg
j
<
------------------------- -
Rth j a
Junction to case
Coupling
Reverse leakage current
Forward voltage drop
F(AV)
Repetitive peak reverse voltage
Forward rms current
Average forward current
Surge non repetitive forward current t
Repetitive peak reverse current
Non repetitive peak reverse current
Repetitive peak avalanche power
Storage temperature range
Maximum operating junction temperature
Critical rate of rise of reverse voltage
(
1
p
p
Absolute ratings (limiting values, per diode)
Thermal resistance
Static electrical characteristics (per diode)
–
= 5 ms, δ < 2%
= 380 µs, δ < 2%
)
condition to avoid thermal runaway for a diode on its own heatsink
+ 0.0086 I
Parameter
F
2
th(j-c)
(RMS)
Doc ID 6347 Rev 7
(Per diode) + P(diode 2) x R
Parameter
Parameter
T
T
T
T
T
T
j
j
j
j
j
j
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
Test conditions
T
δ = 0.5
t
t
t
p
p
p
p
c
= 10 ms sinusoidal
= 2 µs square, F= 1 kHz
= 100 µs square
= 1 µs T
= 155 °C
(1)
V
I
I
F
F
R
= 15 A
= 30 A
= V
Per diode
Total
j
RRM
= 25 °C
Per diode
Per device
th(c)
Min.
-65 to + 175
Typ.
0.64
0.74
2
10000
10800
Value
Value
100
250
175
1.6
0.9
0.1
30
15
30
STPS30H100C
1
3
Max.
0.80
0.67
0.93
0.8
5
6
°C/W
V/µs
Unit
Unit
Unit
°C
°C
W
mA
V
A
A
A
A
A
µA
V