STPS40M100C STMicroelectronics, STPS40M100C Datasheet - Page 3

• Manufacturer Part Number: STPS40M100C
• Description: Power Schottky Rectifier
• Manufacturer: STMicroelectronics

STPS40M100C
Figure 2.
Figure 4.
Figure 6.
350
300
250
200
150
100
20
18
16
14
12
10
0.001
50
8
6
4
2
0
0.01
1.E-03
0
0.1
0
0.01
1
P
P
I
ARM
2
M
ARM p
(1µs)
4
(t )
δ
=0.5
t
0.1
Average forward power dissipation
versus average forward current
(per diode)
Normalized avalanche power
derating versus pulse duration
Non repetitive surge peak forward
current versus overload duration
(maximum values per diode)
6
8
1.E-02
δ=0.05
10
1
12
t (µs)
p
I (
F AV
t(s)
δ=0.1
14
) (A)
16
10
δ=0.2
1.E-01
18
20
100
22
δ=0.5
δ
=tp/T
T
T
T
24
c
c
c
=125 °C
=25 °C
Doc ID 15522 Rev 3
=75 °C
T
δ=1
26
1.E+00
tp
1000
28
Figure 3.
Figure 5.
Figure 7.
22
20
18
16
14
12
10
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
8
6
4
2
0
1.E-03
0
Z th(j-c) /R th(j-c)
Single pulse
1.2
0.8
0.6
0.4
0.2
δ
=tp/T
1
0
25
P
ARM
P
T
25
ARM
Average forward current per diode
versus ambient temperature
(δ = 0.5)
Normalized avalanche power
derating versus junction
temperature
Relative variation of thermal
impedance junction to case versus
pulse duration
(25°C)
tp
(T )
50
j
1.E-02
50
T (°C)
j
75
R
th(j-a)
T
75
amb
tp(s)
=15 °C/W
(°C)
100
R
1.E-01
th(j-a)
100
=R
th(j-c)
Characteristics
125
125
150
1.E+00
150
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