STPS40M80C STMicroelectronics, STPS40M80C Datasheet - Page 3

• Manufacturer Part Number: STPS40M80C
• Description: Power Schottky rectifier
• Manufacturer: STMicroelectronics

Table 4.
1. Pulse test: t
2. Pulse test: t
Figure 2.
Figure 4.
0.001
Symbol
22
20
18
16
14
12
10
0.01
8
6
4
2
0
0.1
V
I
1
0
0.01
R
P
F
F(AV)
(1)
δ = t / T
(2)
P
P
ARM
2
ARM
(W)
p
(1µs)
(t p )
T
4
Reverse leakage current
Forward voltage drop
δ = 0.05
p
p
t
Static electrical characteristics (per diode)
To evaluate the conduction losses use the following equation:
P = 0.475 x I
p
0.1
Average forward power dissipation
versus average forward current
(per diode)
Normalized avalanche power
derating versus pulse duration
6
= 5 ms, δ < 2 %
= 380 µs, δ < 2 %
8
δ = 0.1
Parameter
10
12
1
δ = 0.2
F(AV)
14
16
+ 0.008 x I
10
18
20
T
T
T
T
T
T
T
T
δ = 0.5
j
j
j
j
j
j
j
j
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
22
100
F
24
Doc ID 018718 Rev 1
Test conditions
2
(RMS)
I
F(AV)
26
t (µs)
δ = 1
p
(A)
1000
28
V
I
I
I
F
F
F
R
Figure 3.
Figure 5.
1.2
0.8
0.6
0.4
0.2
= 10 A
= 20 A
= 40 A
= V
1
0
24
22
20
18
16
14
12
10
25
8
6
4
2
0
P
0
I
ARM
P
RRM
F(AV)
ARM
(25 °C)
(A)
(T )
j
25
50
Average forward current versus
ambient temperature
(δ = 0.5, per diode)
Normalized avalanche power
derating versus junction
temperature
Min.
50
-
-
-
-
-
-
-
-
75
75
T
0.550
0.475
0.655
0.570
0.800
0.680
Typ.
amb
R th(j-a) = R th(j-c)
15
15
(°C)
100
100
0.600
0.510
0.735
0.635
0.920
0.795
Max.
125
65
40
125
150
Unit
mA
µA
T (°C)
V
j
175
3/10
150