STPS120MF STMicroelectronics, STPS120MF Datasheet - Page 3
STPS120MF
Manufacturer Part Number
STPS120MF
Description
Power Schottky rectifier in flat package
Manufacturer
STMicroelectronics
Datasheet
1.STPS120MF.pdf
(7 pages)
Specifications of STPS120MF
Very Low Profile Package
0.85 mm
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
STPS120MF
Figure 1.
Figure 3.
Figure 5.
0.001
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.E-03
0.01
6
5
4
3
2
1
0
0.1
0.0
I (A)
1
0.01
M
P
P
F(AV)
I
P
M
ARM
ARM
0.1
(W)
(1 µs)
(t p )
δ
0.2
=0.5
t
Conduction losses versus average
current
Normalized avalanche power
derating versus pulse duration
Non repetitive surge peak forward
current versus overload duration
(maximum values)
0.1
0.3
1.E-02
0.4
δ=0.05
0.5
1
t(s)
t (µs)
I
p
F(AV)
0.6
δ=0.1
(A)
0.7
10
1.E-01
δ=0.2
0.8
0.9
δ
100
=tp/T
1.0
δ=0.5
T
T
T
a
T
a
a
=75°C
=125°C
=25°C
1.1
1.E+00
tp
δ=1
1000
1.2
Figure 2.
Figure 4.
Figure 6.
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.2
0.8
0.6
0.4
0.2
1.E-02
1
0
I
Z
0
25
F(AV)
P
th(j-a)
Single pulse
ARM
P
ARM
(A)
/R
(25 °C)
(T j )
th(j-a)
25
1.E-01
Average forward current versus
ambient temperature (δ = 0.5)
Normalized avalanche power
derating versus junction
temperature
Relative variation of thermal
impedance junction to ambient
versus pulse duration
50
50
1.E+00
R
th(j-a)
75
=250°C/W
T
amb
T (°C)
t (s)
p
j
75
(°C)
1.E+01
R
100
th(j-a)
=R
100
th(j-c)
Characteristics
1.E+02
125
125
1.E+03
150
150
3/7