STPS2045C STMicroelectronics, STPS2045C Datasheet - Page 4

• Manufacturer Part Number: STPS2045C
• Description: Power Schottky Rectifier
• Manufacturer: STMicroelectronics

Specifications of STPS2045C

• Insulated Package: TO-220FPAB

Characteristics
4/10
Figure 7.
Figure 9.
Figure 11. Forward voltage drop vs forward
1.0
0.8
0.6
0.4
0.2
0.0
5E+4
1E+4
1E+3
1E+2
1E+0
1E+1
100.0
1E-1
10.0
1.0
1E-4
0.1
Z
δ = 0.5
δ = 0.2
0
th(j-c)
I (µA)
δ = 0.1
0.0
R
I
FM
(TO-220AB, D PAK, I PAK)
Single pulse
(A)
/R
5
0.2
th(j-c)
Relative variation of thermal
impedance junction to ambient vs
pulse duration
Reverse leakage current vs reverse
voltage applied
(typical values, per diode)
current
(maximum values, per diode)
T =125°C
j
1E-3
10
0.4
(typical values)
T =125°C
2
j
15
0.6
2
20
V
t (s)
p
1E-2
V (V)
T =125°C
T =150°C
T =100°C
T =25°C
FM
T =75°C
T =50°C
j
j
j
j
j
j
R
0.8
(V)
25
T =25°C
j
1.0
30
1E-1
1.2
δ
=tp/T
35
T
1.4
Doc ID 3506 Rev 6
40
tp
1E+0
1.6
45
Figure 8.
Figure 10. Junction capacitance vs reverse
Figure 12. Thermal resistance junction to
80
70
60
50
40
30
20
10
1.0
0.8
0.6
0.4
0.2
0.0
1000
0
500
200
100
1E-3
0
R
Z
th(j-a)
δ = 0.5
δ = 0.2
1
(Epoxy printed circuit board, copper thickness: 35 µm)
th(j-c)
C(pF)
δ = 0.1
Single pulse
(°C/W)
5
/R
th(j-c)
Relative variation of thermal
impedance junction to ambient vs
pulse duration (TO-220FPAB)
voltage applied
(typical values, per diode)
ambient vs copper surface under
tab
2
1E-2
10
15
5
S(cm²)
(D PAK)
t (s)
V (V)
p
1E-1
R
2
20
10
25
1E+0
30
δ
20
=tp/T
STPS2045C
V
OSC
F=1MHz
T =25°C
=30mV
j
T
35
RMS
tp
1E+1
50
40