STPS60H100C STMicroelectronics, STPS60H100C Datasheet

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STPS60H100C

Manufacturer Part Number
STPS60H100C
Description
POWER SCHOTTKY RECTIFIER
Manufacturer
STMicroelectronics
Datasheet

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Main product characteristics
Feature and benefits
Description
Dual center tab Schottky rectifier suited for High
Frequency server and telecom base station
SMPS. Packaged in TO-220AB, this device
combines high current rating and low volume to
enhance both reliability and power density of the
application.
Table 1.
1.
February 2007
Symbol
I
High junction temperature capability
Low leakage current
Low thermal resistance
High frequency operation
Avalanche specification
F(RMS)
V
I
P
dV/dt
dPtot
---------------
I
F(AV)
T
dTj
FSM
RRM
ARM
T
stg
j
<
V
------------------------- -
Rth j a
V
I
F(max)
F(AV)
RRM
T
(
1
Repetitive peak reverse voltage
RMS forward current
Average forward current
Surge non repetitive forward current
Repetitive peak avalanche power
Storage temperature range
Maximum operating junction temperature
Critical rate of rise of reverse voltage
Absolute ratings (limiting values)
j
)
condition to avoid thermal runaway for a diode on its own heatsink
2 x 30 A
175° C
0.72 V
100 V
Parameter
Tc = 150° C
δ = 0.5
(1)
Rev 2
Order code
STPS60H100CT
Part Number
Per diode
Per device
t
t
p
p
= 10 ms Sinusoidal
= 1 µs T
Power Schottky rectifier
K
STPS60H100CT
j
= 25° C
A1
A2
STPS60H100C
TO-220AB
-65 to + 175
K
STPS60H100CT
A1
18100
10000
Value
100
175
300
60
30
60
Marking
K
A2
www.st.com
V/μs
Unit
° C
° C
W
V
A
A
A
1/7
7

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STPS60H100C Summary of contents

Page 1

... Tc = 150° C Per diode δ = 0.5 Per device Sinusoidal µ (1) Rev 2 STPS60H100C Power Schottky rectifier TO-220AB STPS60H100CT Marking STPS60H100CT Value 100 300 = 25° C 18100 j - 175 175 10000 V/μs www.st.com Unit ° C ° C 1/7 ...

Page 2

... 125° 25° 125° 25° 125° δ < 2% δ < (RMS) STPS60H100C Value Unit 1.0 0.7 ° C/W 0.4 R th(c) Min. Typ. Max RRM 3 10 0.84 0.67 0.72 0.92 0.98 0.8 0.84 Unit µ ...

Page 3

... STPS60H100C Figure 1. Average forward power dissipation versus average forward current (per diode) P (W) F(AV) 26 δ = 0.2 δ = 0.1 24 δ (A) F(AV Figure 3. Normalized avalanche power derating versus pulse duration ARM p P (1µs) ARM 1 0.1 0.01 t (µs) p 0.001 ...

Page 4

... I (A) FM 100 T =125°C j (maximum values) T =125°C j (typical values ( 0.0 0.2 0.4 0.6 0.8 4/7 Figure 8. C(nF) 10.0 1.0 V ( 100 T =25°C j (maximum values) 1.0 1.2 1.4 STPS60H100C Junction capacitance versus reverse voltage applied (typical values) F=1MHz V =30mV OSC T =25° ( RMS 100 ...

Page 5

... STPS60H100C 2 Package information ● Epoxy meets UL94, V0 ● Cooling method: by conduction (C) ● Recommended torque value: 0.8 Nm ● Maximum torque value: 1.0 Nm Figure 10. Package dimensions TO-220AB H2 Dia order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97 ...

Page 6

... Ordering information 3 Ordering information Ordering type STPS60H100CT 4 Revision history Date 02-Aug-2004 07-Feb-2007 6/7 Marking Package STPS60H100CT TO-220AB Revision 1 First issue Reformatted to current stndards. Added ECOPACK 2 statement on page 5. Corrected typograhical errors on pages 1 and 3 STPS60H100C Weight Base qty Delivery mode 2. Tube Description of Changes ...

Page 7

... STPS60H100C Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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