TMBYV10-40 STMicroelectronics, TMBYV10-40 Datasheet
TMBYV10-40
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TMBYV10-40 Summary of contents
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DESCRIPTION Metal to silicon rectifier diodes in glass case featur- ing very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high fre- quency circuits. ABSOLUTE MAXIMUM RATINGS (limiting ...
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... TMBYV10-40 ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Synbol 100 Pulse test: t 300 s 2%. p DYNAMIC CHARACTERISTICS Symbol Forward current flow in a Schottky rectifier is due to majority carrier conduction. So reverse recovery is not affected by storage charge as in conventional PN junction diodes ...
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... Fig Reverse current versus junction temperature. Fig Capacitance C versus reverse applied voltage V (typical values) R Fig Reverse current versus VRRM in per cent. Fig Surge non repetitive forward current for a rectangular pulse with t â 10 ms. TMBYV10-40 3/4 ...
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... Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. 4/4 REF Cooling method: by convection and conduction Marking: ring at cathode end. Weight: 0.139g ORDERING CODE : TMBYV10-40 FILM 3 STMicroelectronics GROUP OF COMPANIES http://www.st.com DIMENSIONS Millimeters Inches Min. Typ. Max. Min. Typ. Max. 4.80 5.20 0.189 2.50 2.65 0.098 ...