BAR18 STMicroelectronics, BAR18 Datasheet - Page 3
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BAR18
Manufacturer Part Number
BAR18
Description
Small Signal Schottky Diode
Manufacturer
STMicroelectronics
Datasheet
1.BAR18.pdf
(4 pages)
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Fig. 2: Reverse leakage current versus reverse
voltage applied (typical values).
1E+1
1E+0
Fig. 4: Junction capacitance versus reverse voltage
applied (typical values).
2.0
1.0
0.1
Fig. 6: Thermal resistance junction to ambient ver-
sus copper surface under each lead (Epoxy printed
circuit board FR4, copper thickness: 35 m).
350
300
250
200
150
1E-1
1E-2
1E-3
1
C(pF)
0
Rth(j-a) (°C/W)
0
IR(µA)
5 10 15 20 25 30 35 40 45 50 55 60 65 70
5
10
15
20
S(Cu) (mm²)
Tj=100°C
VR(V)
Tj=25°C
VR(V)
10
25
30
35
40
F=1MHz
P=0.25W
Tj=25°C
45
100
50
Fig. 3: Reverse leakage current versus junction
temperature (typical values)
5E+2
1E+2
1E+1
1E+0
Fig. 5: Relative variation of thermal impedance
junction to ambient versus pulse duration (alumine
substrate 10mm*8mm*0.5mm).
1.00
0.10
0.01
1E-1
1E-2
1E-3
Zth(j-a)/Rth(j-a)
0
IR(µA)
Single pulse
= 0.2
= 0.5
= 0.1
VR=70V
1E-2
25
50
1E-1
BAR 18 / BAS70-04 06
tp(s)
Tj(°C)
75
1E+0
100
1E+1
=tp/T
125
T
tp
1E+2
3/4
150