STPS30M100S STMicroelectronics, STPS30M100S Datasheet - Page 3

• Manufacturer Part Number: STPS30M100S
• Description: 100 V, 30 A power Schottky rectifier
• Manufacturer: STMicroelectronics

STPS30M100S
Figure 2.
Figure 4.
Figure 6.
0.001
0.01
0.1
350
300
250
200
150
100
26
24
22
20
18
16
14
12
10
1
0.01
8
6
4
2
0
50
1.E-03
0
P
0
P
ARM
ARM
I
M
(1 µs)
4
(t p )
δ
=0.5
t
To evaluate the conduction losses use the following equation:
P = 0.475 x I
0.1
Conduction losses versus average
current
Normalized avalanche power
derating versus pulse duration
Non repetitive surge peak forward
current versus overload duration
(maximum values)
8
δ=0.05
1.E-02
12
δ=0.1
1
16
t (µs)
I (av)(A)
F
p
F(AV)
t(s)
δ=0.2
20
+ 0.006 x I
10
1.E-01
24
δ=0.5
T0-220AB / I 2 PAK
28
δ
100
=t /T
p
32
F
δ=1
Tc=125°C
2
Tc=25°C
Tc=75°C
Doc ID 15523 Rev 3
T
(RMS)
1.E+00
t
36
p
1000
Figure 3.
Figure 5.
Figure 7.
1.2
0.8
0.6
0.4
0.2
1
0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
35
30
25
20
15
10
25
5
0
1.E-03
P
0
ARM
P
Z th(j-c) /R th(j-c)
T0-220AB / I 2 PAK
ARM
Single pulse
δ
=t p /T
(25 °C)
(T j )
T
25
50
Average forward current versus
ambient temperature (δ = 0.5)
Normalized avalanche power
derating versus junction
temperature
Relative variation of thermal
impedance junction to case versus
pulse duration
t p
1.E-02
50
75
R th(j-a) =R th(j-c)
T
amb
T (°C)
tp(s)
Rth(j-a)=15°C/W
75
j
(°C)
100
1.E-01
100
Characteristics
125
125
1.E+00
150
3/10
150