STPS640C STMicroelectronics, STPS640C Datasheet - Page 4

• Manufacturer Part Number: STPS640C
• Description: Power Schottky Rectifier
• Manufacturer: STMicroelectronics

Specifications of STPS640C

• Insulated Package: TO-220FPAB

Characteristics
4/9
Figure 7.
Figure 9.
Figure 11. Forward voltage drop versus
1.0
0.8
0.6
0.4
0.0
1E-2
1E-3
1E-4
1E-5
10.0
0.2
1.0
0.1
1E-3
0.0
0
Z
I (A)
R
I
th(j-c)
Single pulse
δ = 0.5
δ = 0.2
δ = 0.1
FM
(A)
0.1
/R
5
th(j-c)
0.2
Relative variation of thermal
transient impedance junction to
case versus pulse duration
(TO-220AB/DPAK)
Reverse leakage current versus
reverse voltage applied (typical
values, per diode)
forward current (maximum values,
per diode)
10
(typical values)
T =150°C
1E-2
0.3
j
15
0.4
V
V (V)
t (s)
T =150°C
T =125°C
T =100°C
T =75°C
p
FM
j
j
j
j
R
20
0.5
(V)
0.6
25
1E-1
T =25°C
j
0.7
30
δ
=tp/T
0.8
T
35
0.9
tp
1E+0
1.0
40
Figure 8.
Figure 10. Junction capacitance versus
Figure 12. Thermal resistance junction to
1.0
0.8
0.6
0.4
0.2
0.0
500
100
80
70
60
50
40
30
20
10
10
1E-3
0
1
0
Z
R
C(pF)
th(j-c)
δ = 0.5
Single pulse
th(j-a)
δ = 0.2
δ = 0.1
4
/R
(°C/W)
th(j-c)
2
8
Relative variation of thermal
impedance junction to case versus
pulse duration
(TO-220FPAB)
reverse voltage applied (typical
values, per diode)
ambient versus copper surface
under tab (Epoxy printed circuit
board FR4, copper thickness:
35 µm)
1E-2
12
16
S(Cu)(cm²)
5
1E-1
t (s)
p
V (V)
20
R
10
24
28
1E+0
20
δ
=tp/T
32
STPS640C
V
OSC
F=1MHz
T =25°C
T
=30mV
j
36
tp
RMS
1E+1
40
50