STPS60170C STMicroelectronics, STPS60170C Datasheet

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STPS60170C

Manufacturer Part Number
STPS60170C
Description
High Voltage Power Schottky Rectifier
Manufacturer
STMicroelectronics
Datasheet

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Table 1: Main Product Characteristics
FEATURES AND BENEFITS
DESCRIPTION
Dual center tab Schottky rectifier suited for High
Frequency Switched Mode Power Supplies.
Packaged in TO-220AB, this device is intended for
use to enhance the reliability of the application.
Table 3: Absolute Ratings (limiting values, per diode)
September 2005
* :
Symbol
I
V
F(RMS)
I
P
dPtot
---------------
dV/dt
I
High junction temperature capability
Low leakage current
Good trade off between leakage current and
forward voltage drop
Low thermal resistance
High frequency operation
Avalanche specification
F(AV)
T
dTj
FSM
RRM
ARM
T
stg
j
<
V
V
F
I
------------------------- -
Rth j a
F(AV)
(max)
Repetitive peak reverse voltage
RMS forward current
Average forward current
Surge non repetitive forward current
Repetitive peak avalanche power
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise of reverse voltage
®
RRM
T
j
(
1
)
thermal runaway condition for a diode on its own heatsink
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
2 x 30 A
175 °C
0.76 V
170 V
T
c
Parameter
= 150 °C δ = 0.5
REV. 1
Table 2: Order Code
t
t
p
p
= 10 ms sinusoidal
= 1 µs T
STPS60170CT
Part Number
j
= 25 °C
Per diode
Per device
STPS60170CT
A1
A2
K
TO-220AB
STPS60170C
A1
-65 to + 175
K
STPS60170CT
A2
K
17300
10000
Value
170
270
175
Marking
60
30
60
V/µs
Unit
°C
°C
W
V
A
A
A
1/6

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STPS60170C Summary of contents

Page 1

... Part Number STPS60170CT Parameter = 150 °C δ sinusoidal µ REV. 1 STPS60170C TO-220AB STPS60170CT Marking STPS60170CT Value 170 60 Per diode 30 Per device 60 270 = 25 °C 17300 j - 175 175 10000 Unit °C °C V/µs ...

Page 2

... STPS60170C Table 4: Thermal Parameters Symbol R Junction to case th(j-c) R th(c) When the diodes 1 and 2 are used simultaneously: ∆ Tj(diode 1) = P(diode (Per diode) + P(diode th(j-c) Table 5: Static Electrical Characteristics (per diode) Symbol Parameter I * Reverse leakage current Forward voltage drop F δ Pulse test ms, < ...

Page 3

... Figure impedance junction to case versus pulse duration 1.0 0.9 0.8 0.7 0.6 T =50°C C 0.5 0.4 T =75°C C 0.3 T =125°C 0.2 C 0.1 0.0 1.E-01 1.E+00 1.E-03 STPS60170C R =R th(j-a) th(j-c) R =15°C/W th(j- (° amb 100 125 4: Normalized avalanche (t ) ARM p (25°C) T (° 100 6: Relative variation Single pulse ...

Page 4

... STPS60170C Figure 7: Reverse leakage current versus reverse voltage applied (typical values, per diode) 1.E+05 T =150°C j 1.E+04 T =125°C j 1.E+03 T =100°C j 1.E+02 T =75° =50°C 1.E+ =25°C 1.E+00 j 1.E- 100 110 120 130 140 150 160 170 Figure 9: Forward voltage drop versus forward ...

Page 5

... Maximum torque value: 0.7 Nm. Table 7: Revision History Date Revision 16-Sep-2005 REF Diam. Package TO-220AB 1 First issue. STPS60170C DIMENSIONS Millimeters Inches Min. Max. Min. 4.40 4.60 0.173 1.23 1.32 0.048 2.40 2.72 0.094 0.49 0.70 0.019 0.61 0.88 0.024 1.14 1.70 0.044 1.14 1.70 0.044 4.95 5.15 0.194 2.40 2.70 0.094 10 10.40 ...

Page 6

... STPS60170C Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice ...

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