STPS10120C STMicroelectronics, STPS10120C Datasheet - Page 3
STPS10120C
Manufacturer Part Number
STPS10120C
Description
Power Schottky Rectifier
Manufacturer
STMicroelectronics
Datasheet
1.STPS10120C.pdf
(8 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
STPS10120C
Figure 1.
Figure 3.
Figure 5.
0.001
0.01
0.1
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
90
80
70
60
50
40
30
20
10
1.E-03
0
1
0.01
0.0
P
P
I (A)
M
P
F(AV)
ARM
I
M
ARM p
0.5
(1µs)
(W)
(t )
δ
=0.5
t
1.0
0.1
Average forward power dissipation
versus average forward current
(per diode)
Normalized avalanche power
derating versus pulse duration
Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
(TO-220AB)
1.5
1.E-02
δ = 0.05
2.0
1
2.5
I
F(AV)
δ = 0.1
t (µs)
p
t(s)
3.0
(A)
δ = 0.2
3.5
10
1.E-01
4.0
δ = 0.5
4.5
δ
=tp/T
100
5.0
T =125°C
T
T =25°C
T =75°C
c
δ = 1
c
c
5.5
1.E+00
tp
6.0
1000
Figure 2.
Figure 4.
Figure 6.
1.2
0.8
0.6
0.4
0.2
6
6
5
5
4
4
3
3
2
2
1
1
0
70
60
50
40
30
20
10
1
0
1.E-03
0
0
25
I
F(AV)
I (A)
P
M
δ
ARM
P
=tp/T
I
M
ARM p
(A)
(25°C)
25
T
(t )
δ
=0.5
t
Average forward current versus
ambient temperature
(
Normalized avalanche power
derating versus junction
temperature
Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
(TO-220FPAB)
50
tp
δ
= 0.5, per diode)
50
R
1.E-02
th(j-a)
=30° C/W
75
T
75
amb
T (°C)
j
t(s)
(°C)
100
R
TO-220FPAB
th(j-a)
100
1.E-01
=R
th(j-c)
125
TO-220AB
Characteristics
125
150
T =125°C
T =25°C
T =75°C
c
c
c
1.E+00
175
150
3/8