STPS61L45C STMicroelectronics, STPS61L45C Datasheet - Page 2

• Manufacturer Part Number: STPS61L45C
• Description: Power Schottky Rectifier
• Manufacturer: STMicroelectronics

1
2/8
Characteristics
Table 2.
1.
Table 3.
When the diodes 1 and 2 are used simultaneously :
Δ
Table 4.
1. Pulse test: t
2. Pulse test: t
To evaluate the conduction losses use the following equation:
P = 0.3 x I
Symbol
Symbol
Symbol
Tj(diode 1) = P(diode1) x R
I
R
R
V
V
F(RMS)
P
I
I
I
F(AV)
th(j-c)
R
T
FSM
th(c)
F
RRM
ARM
T
dPtot
(1)
stg
(2)
dTj
j
<
Reverse leakage current
Forward voltage drop
Junction to case
Coupling
F(AV)
Rth(j-a)
Repetitive peak reverse voltage
Forward rms current
Average forward current δ = 0.5
Surge non repetitive forward current t
Repetitive peak avalanche power
Storage temperature range
Maximum operating junction temperature
1
p
p
Absolute ratings (limiting values per diode at 25 °C unless otherwise
specified)
Thermal resistances
Static electrical characteristics (per diode)
= 5 ms, δ < 2%
= 380 µs, δ < 2%
+ 0.007 x I
condition to avoid runaway for a diode on its own heatsink
Parameter
F
2
(RMS)
th(j-c)
Doc ID 14192 Rev 2
(Per diode) + P(diode 2) x R
Parameter
Parameter
T
T
T
T
T
T
T
T
j
j
j
j
j
j
j
j
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
Test conditions
T
T
t
p
p
c
c
= 10 ms sinusoidal
= 1 µs Tj = 25 °C
= 120 °C
= 115 °C
(1)
V
I
I
I
F
F
F
R
= 5 A
= 15 A
= 30 A
= V
Per diode
Total
RRM
Per diode
Per device
th(c)
Min.
.
-65 to + 175
Typ.
0.35
0.23
0.43
0.34
0.50
0.45
190
Value
10000
Value
0.75
1.3
0.2
500
150
45
60
30
60
Max.
0.50
0.40
0.56
0.51
400
1.5
°C/W
°C/W
Unit
Unit
Unit
°C
°C
W
mA
V
A
A
A
V