STPS60L45C STMicroelectronics, STPS60L45C Datasheet
STPS60L45C
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STPS60L45C Summary of contents
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... Rth July 2003 - Ed 150° 0.50 V Parameter Tc = 135° Sinusoidal µs square F=1kHz tp = 100 µs square tp = 1µ 25°C STPS60L45CW TO-247 Value Per diode 60 Per device 600 2 4 ...
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... STPS60L45CW THERMAL RESISTANCES Symbol R Junction to case th (j- (c) When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1 th(j-c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter I * Reverse leakage cur- R rent V * Forward voltage drop F Pulse test : * tp = 380 µs, < evaluate the conduction losses use the following equation : ...
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... VFM(V) 1 0.0 0.2 0.4 0.6 0.8 Fig. 6: Relative variation of thermal transient values, per impedance junction to case versus pulse duration. Zth(j-c)/Rth(j-c) 1.0 0.8 = 0.5 0.6 Tc=25°C 0.4 = 0.2 Tc=75°C = 0.1 0.2 Tc=125°C Single pulse 0.0 1E-4 1E-1 1E+0 Fig. 8: Junction capacitance versus reverse voltage applied (typical values, per diode). C(nF) 10.0 1.0 0 1.0 1.2 1.4 STPS60L45CW tp(s) =tp/T 1E-3 1E-2 1E-1 F=1MHz VR( 1E+0 Tj=25°C 50 3/4 ...
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... F(x3 Type Marking STPS60L45CW STPS60L45CW Cooling method : C RECOMMENDED TORQUE VALUE : 0.8M.N MAXIMUM TORQUE VALUE : 1.0M.N EPOXY MEETS UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics ...