STPS30M60 STMicroelectronics, STPS30M60 Datasheet - Page 3

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STPS30M60

Manufacturer Part Number
STPS30M60
Description
Power Schottky rectifier
Manufacturer
STMicroelectronics
Datasheet

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STPS30M60
Figure 2.
Figure 4.
Figure 6.
0.001
400
350
300
250
200
150
100
28
24
20
16
12
0.01
50
8
4
0
0.1
1.E-03
0
1
0.01
0
P
I (A)
M
I
F(AV)
P
M
P
ARM
ARM
(W)
4
δ = 0.5
(1µs)
(t p )
t
8
0.1
Average forward power dissipation
versus average forward current
Normalized avalanche power
derating versus pulse duration
Non repetitive surge peak forward
current versus overload duration
(maximum values)
δ = 0.05
12
1.E-02
16
δ = 0.1
1
δ = t / T
20
δ = 0.2
p
T
24
10
1.E-01
t
p
28
δ = 0.5
32
100
T = 125 °C
T = 25 °C
T = 75 °C
c
c
c
Doc ID 022045 Rev 1
I
F(AV)
36
δ = 1
t(s)
t (µs)
1.E+00
p
(A)
1000
40
Figure 3.
Figure 5.
1.2
0.8
0.6
0.4
0.2
Figure 7.
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1
0
35
30
25
20
15
10
25
1.E-04
5
0
P
0
ARM
Z
I
P
F(AV)
th(j-c)
ARM
Single pulse
(25 °C)
(A)
(T )
/R
j
th(j-c)
25
50
Average forward current versus
ambient temperature (δ = 0.5)
Normalized avalanche power
derating versus junction
temperature
Relative thermal impedance
junction to case versus pulse
duration
1.E-03
50
R th(j-a) = R th(j-c)
75
1.E-02
T
amb
75
(°C)
100
100
1.E-01
Characteristics
125
125
t (s)
p
T (°C)
1.E+00
j
150
3/7
150

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