STPS15SM80C STMicroelectronics, STPS15SM80C Datasheet - Page 3

• Manufacturer Part Number: STPS15SM80C
• Description: Power Schottky rectifier
• Manufacturer: STMicroelectronics

Specifications of STPS15SM80C

• Insulated Voltage: 2000 V
• Package Capacitance: 45 pF

Table 4.
1. Pulse test: t
2. Pulse test: t
Figure 2.
Figure 4.
0.001
Symbol
7
6
5
4
3
2
1
0
0.01
0.1
V
0
I
1
0.01
P
R
F
F(AV)
(1)
(2)
P
P
ARM
ARM
(W)
1
(1µs)
(t p )
Reverse leakage current
Forward voltage drop
p
p
Static electrical characteristics (per diode)
To evaluate the conduction losses use the following equation:
P = 0.540 x I
0.1
Average forward power dissipation
versus average forward current
(per diode)
Normalized avalanche power
derating versus pulse duration
2
= 5 ms, δ < 2 %
= 380 µs, δ < 2 %
Parameter
3
δ = 0.05 δ = 0.1
1
4
F(AV)
5
δ = t / T
+ 0.016 x I
10
δ = 0.2
p
6
T
T
T
T
T
T
T
T
T
t
j
j
j
j
j
j
j
j
p
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
7
δ = 0.5
100
F
Doc ID 018737 Rev 1
Test conditions
2
(RMS)
I
8
F(AV)
t (µs)
p
δ = 1
(A)
1000
9
V
I
I
I
F
F
F
R
Figure 3.
Figure 5.
1.2
0.8
0.6
0.4
0.2
= 3 A
= 7.5 A
= 15 A
= V
9
8
7
6
5
4
3
2
1
0
1
0
25
0
P
I
F(AV)
ARM
P
RRM
ARM
(A)
(25 °C)
(T )
25
j
50
Average forward current versus
ambient temperature
(δ = 0.5, per diode)
Normalized avalanche power
derating versus junction
temperature
Min.
50
-
-
-
-
-
-
-
-
TO-220AB / I PAK / D PAK
75
R th(j-a) = R th(j-c)
75
T
0.550
0.485
0.710
0.600
0.860
0.690
amb
Typ.
TO-220FPAB
3.5
4
(°C)
2
100
100
2
0.600
0.520
0.780
0.660
0.955
0.780
Max.
125
20
15
125
150
Unit
mA
µA
T (°C)
V
j
175
3/11
150