STPS30M80C STMicroelectronics, STPS30M80C Datasheet - Page 4

• Manufacturer Part Number: STPS30M80C
• Description: Power Schottky rectifier
• Manufacturer: STMicroelectronics

Specifications of STPS30M80C

• Insulated Voltage: 2000 V
• Package Capacitance: 45 pF

Characteristics
4/11
Figure 6.
Figure 8.
Figure 10. Reverse leakage current versus
200
180
160
140
120
100
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.E+05
1.E+04
1.E+03
1.E+02
1.E+01
1.E+00
80
60
40
20
1.E-04
1.E-03
0
Z
I (A)
M
th(j-c)
Single pulse
0
I
I (µA)
M
R
/R
th(j-c)
δ = 0.5
10
t
Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
Relative thermal impedance
junction to case versus pulse
duration
reverse voltage applied
(typical values, per diode)
1.E-03
TO-220AB / I PAK / D PAK
20
1.E-02
30
T = 125 °C
T = 100 °C
T = 50 °C
T = 25 °C
2
T = 150 °C
T = 75 °C
j
j
j
j
j
j
1.E-02
40
2
TO-220AB / I PAK / D PAK
1.E-01
50
1.E-01
60
2
T = 75 °C
T = 125 °C
T = 25 °C
c
c
c
Doc ID 018722 Rev 1
70
2
V (V)
t (s)
t(s)
p
1.E+00
R
1.E+00
80
Figure 7.
Figure 9.
Figure 11. Junction capacitance versus
110
100
10000
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
90
80
70
60
50
40
30
20
10
1000
1.E-03
1.E-03
0
100
I (A)
Z
M
th(j-c)
1
C(pF)
I
M
Single pulse
/R
δ = 0.5
th(j-c)
t
Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
Relative thermal impedance
junction to case versus pulse
duration (TO-220FPAB)
reverse voltage applied
(typical values, per diode)
1.E-02
1.E-02
TO-220FPAB
1.E-01
10
V (V)
R
1.E-01
1.E+00
STPS30M80C
V
osc
TO-220FPAB
F = 1 MHz
T = 25 °C
T = 125 °C
= 30 mV
j
c
T = 25 °C
T = 75 °C
c
c
t(s)
t (s)
p
1.E+00
1.E+01
RMS
100