STPS160H100 STMicroelectronics, STPS160H100 Datasheet
STPS160H100
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STPS160H100 Summary of contents
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... Parameter Tc = 110° sinusoidal µs square F = 1kHz tp = 100 µs square tp = 1µ 25°C STPS160H100TV ISOTOP Value Unit 100 ...
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... STPS160H100TV THERMAL RESISTANCES Symbol R Junction to case th (j- (c) When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1 th(j-c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter I * Reverse leakage Current Forward Voltage drop F Pulse test : * ms, < 380 µs, < evaluate the conduction losses use the following equation : ...
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... Fig. 6: Relative variation of thermal impedance junction to case versus pulse duration (per diode). Zth(j-c)/Rth(j-c) 1.0 0.8 = 0.5 0.6 Tc=50°C 0.4 = 0.2 = 0.1 Tc=90°C 0.2 0.0 1E-1 1E+0 1E-3 STPS160H100TV Rth(j-a)=Rth(j-c) Rth(j-a)=2°C/W T Tamb(°C) =tp 100 (t ) (25°C) T (° 100 Single pulse tp(s) 1E-2 1E-1 125 150 125 150 ...
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... STPS160H100TV Fig. 7: Reverse leakage current versus reverse voltage applied (typical values, per diode). IR(mA) 5E+1 1E+1 Tj=125°C 1E+0 1E-1 1E-2 Tj=25°C 1E Fig. 9: Forward voltage drop versus forward current (maximum values, per diode). IFM(A) 500 Tj=125°C 100 10 VFM(V) 1 0.0 0.2 0.4 0.6 0.8 4/5 Fig. 8: Junction capacitance versus reverse volt- age applied (typical values, per diode) ...
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... Maximum torque value: 1.5 N.m. n Ordering type Marking STPS160H100TV STPS160H100TV Epoxy meets UL94,V0 n Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics ...