STTH4R02-Y STMicroelectronics, STTH4R02-Y Datasheet - Page 4

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STTH4R02-Y

Manufacturer Part Number
STTH4R02-Y
Description
Automotive Ultrafast recovery diode
Manufacturer
STMicroelectronics
Datasheet

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0
Characteristics
4/9
Figure 7.
Figure 9.
Figure 11. Thermal resistance, junction to
120
100
10
110
100
80
60
40
20
8
6
4
2
0
90
80
70
60
50
40
30
20
10
0
0
0
0.0
0
V
R
I
V
F
=160V
50
=4A
R
I
0.5
50
F
=160V
=4A
Reverse recovery charges versus
dI
Peak reverse recovery current
versus dI
ambient, versus copper surface
under tab - SMB
100
100
1.0
F
Epoxy printed circuit board FR4,
copper thickness = 35 µm
/dt (typical values)
150
150
1.5
T
j
=125°C
200
200
2.0
T
F
T
j
=25°C
j
=125°C
/dt (typical values)
250
250
2.5
300
300
3.0
T
j
=25°C
350
350
3.5
400
400
4.0
dI
dI
F
S
/dt(A/µs)
F
CU
/dt(A/µs)
450
450
(cm²)
4.5
Doc ID 17391 Rev 1
SMB
500
500
5.0
Figure 8.
Figure 10. Dynamic parameters versus
Figure 12. Thermal resistance, junction to
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
100
80
70
60
50
40
30
20
10
25
90
80
70
60
50
40
30
20
10
0
0
10
0.0
V
R
I
F
=160V
=4A
0.5
50
Reverse recovery time versus dI
(typical values)
junction temperature
ambient, versus copper surface
under tab - SMC
1.0
Epoxy printed circuit board FR4,
copper thickness = 35 µm
I
RM
1.5
Q
RR
75
2.0
S
CU
100
2.5
(cm²)
T
T
j
j
=25°C
=125°C
100
3.0
3.5
125
4.0
STTH4R02-Y
dI
T
F
j
(°C)
/dt(A/µs)
V
R
I
F
4.5
=160V
=4A
SMC
150
1000
5.0
F
/dt

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