TS861 STMicroelectronics, TS861 Datasheet - Page 5

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TS861

Manufacturer Part Number
TS861
Description
Rail-to-rail micropower BiCMOS comparator
Manufacturer
STMicroelectronics
Datasheet

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TS861, TS862, TS864
Note:
Table 4.
1. Maximum values including unavoidable inaccuracies of the industrial test.
2. Design evaluation.
Limits are 100% production tested at 25°C. Limits over temperature are guaranteed through
correlation and by design.
Symbol
CMR
T
T
ΔV
SVR
V
V
A
V
I
T
I
I
T
PLH
PHL
CC
IO
OH
IB
VD
OL
IO
F
R
IO
Input offset voltage
Input offset voltage drift
Input offset current
Input bias current
High level output voltage
Low level output voltage
Large signal voltage gain
Common mode rejection ratio
Supply voltage rejection ratio
Supply current per comparator
Propagation delay from output low to output high
V
Propagation delay from output high to output low
V
Fall time
f = 10 kHz, C
Rise time
f = 10 kHz, C
ICM
ICM
TS861/2/4
Tmin<T<Tmax
TS861/2/4A
Tmin<T<Tmax
Tmin<T<Tmax
Tmin<T<Tmax
I
Tmin<T<Tmax
I
Tmin<T<Tmax
0 < V
2.7 < V
no load, output low
no load, output high
overdrive = 10 mV
overdrive = 100 mV
overdrive = 10 mV
overdrive = 100 mV
SOURCE
SINK
Electrical characteristics at V
(unless otherwise specified)
= 2.5 V, f = 10 kHz, C
= 2.5 V, f = 10 kHz, C
ICM
= 5 mA
CC
= 5 mA
< 5 V
< 10 V
L
L
= 50 pF, overdrive = 100 mV
= 50 pF, overdrive = 100 mV
(1)
(1)
Parameter
Doc ID 6422 Rev 2
(2)
L
L
= 50 pF
= 50 pF
CC
= 5 V, T
amb
= 25° C
Min.
4.45
4.6
Electrical characteristics
Typ.
240
4.8
0.2
0.5
0.4
70
80
20
20
3
3
6
1
1
6
8
2
2
Max.
0.55
150
300
300
600
0.4
15
18
10
12
14
7
μV/°C
Unit
mV
pA
pA
dB
dB
dB
μA
µs
µs
ns
ns
V
V
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