BF1218 NXP Semiconductors, BF1218 Datasheet

The BF1218 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads and an integrated switch

BF1218

Manufacturer Part Number
BF1218
Description
The BF1218 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads and an integrated switch
Manufacturer
NXP Semiconductors
Datasheet
1.BF1218.pdf (23 pages)

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1. Product profile
CAUTION
1.1 General description
1.2 Features and benefits
1.3 Applications
The BF1218 is a combination of two dual gate MOSFET amplifiers with shared source
and gate2 leads and an integrated switch. The integrated switch is operated by the gate1
bias of amplifier B.
The source and substrate are interconnected. Internal bias circuits enable DC stabilization
and a very good cross modulation performance during Automatic Gain Control (AGC).
Integrated diodes between the gates and source protect against excessive input voltage
surges. The transistor has a SOT363 micro-miniature plastic package.
BF1218
Dual N-channel dual gate MOSFET
Rev. 01 — 14 April 2010
Two low noise gain controlled amplifiers in a single package. One with a fully
integrated bias and one with a partly integrated bias
Internal switch to save external components
Superior cross modulation performance during AGC
High forward transfer admittance
High forward transfer admittance to input capacitance ratio
Gain controlled low noise amplifiers for VHF and UHF applications with 5 V supply
voltage
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
digital and analog television tuners
professional communication equipment
Product data sheet

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BF1218 Summary of contents

Page 1

... Rev. 01 — 14 April 2010 1. Product profile 1.1 General description The BF1218 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads and an integrated switch. The integrated switch is operated by the gate1 bias of amplifier B. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross modulation performance during Automatic Gain Control (AGC) ...

Page 2

... [2] - [ S(opt MHz [3] 102 [4] 102 - Simplified outline Graphic symbol G1A G1B BF1218 Max Unit - 180 2.1 2.6 pF 2.1 2 0.9 1.5 dB 1.4 2.0 dB 105 - dBV 105 - dBV C ...

Page 3

... Dual N-channel dual gate MOSFET Marking code M7 Conditions Min Max 10 - 10 -  109 C [ 180 sp 65 +150 - 150 001aac193 100 150 200 T (˚C) sp © NXP B.V. 2010. All rights reserved. BF1218 Version SOT363 Unit C  ...

Page 4

... G1-S(A) amplifier G1-S( G2-S G1-S( G1-S(A) DS(A) DS(B) Figure 3). Figure 3). All information provided in this document is subject to legal disclaimers. Rev. 01 — 14 April 2010 BF1218 Dual N-channel dual gate MOSFET Typ 225 Min Typ 0 100 A 0 100 A 0 k ...

Page 5

... V GG 001aac205 amplifier A is off; amplifier amplifier A is on; amplifier B is off. GG Functional diagram Min 26 [2] - [2] - [ BF1218 Typ Max Unit 2.1 2 0.9 1 ...

Page 6

... G1-S(A) ( 1.6 V. G1-S(A) ( 1.5 V. G1-S(A) ( 1.4 V. G1-S(A) ( 1.3 V. G1-S(A) ( 1.2 V. G1-S(A) ( 1.1 V. G1-S(A) ( G1-S( G2-S G1-S(B) DS(B) Amplifier A: output characteristics; typical values BF1218 Typ Max Unit - - dB dB dBV 105 - dBV 001aaa555 (1) (2) (3) (4) (5) (6) (7) ( C. j © NXP B.V. 2010. All rights reserved. ...

Page 7

... D( DS(A) G2-S DS(  internal gate1 current = current in pin D(B) drain (AMP B) if MOSFET (B) is switched off. Amplifier A: drain current as a function of internal gate1 current; typical values © NXP B.V. 2010. All rights reserved. BF1218 001aac206 60 (μ G1-S( ...

Page 8

... Amplifier A: drain current as a function of gate2 voltage; typical values 0 gain (dB MHz; see DS(A) DS(B) G1-S(B) Figure 33. AGC voltage; typical values BF1218 001aaa559 (1) (2) (3) (4) (5) ( (V) G2-S 001aac196 (V) AGC © NXP B.V. 2010. All rights reserved ...

Page 9

... DS(A) G2-S DS( D(A) phase as a function of frequency; typical values BF1218 001aaa564 (MHz G1-S(B) 001aaa566 3 10 −ϕ rs (deg (MHz G1-S(B) © NXP B.V. 2010. All rights reserved ...

Page 10

... G1-S(B) amb (degree) 22.7 45.75 BF1218 Angle (degree) 1.24 2.54 5.09 7.60 10.10 12.60 15.11 17.61 20.12 22.57 25.05  C; typical values; r (ratio) n 0.65 0.62 © NXP B.V. 2010. All rights reserved ...

Page 11

... All information provided in this document is subject to legal disclaimers. Rev. 01 — 14 April 2010 Dual N-channel dual gate MOSFET Min 25 [2] - [2] - [ MHz 102 BF1218 Typ Max Unit 2.1 2 1.1 1 ...

Page 12

... Dual N-channel dual gate MOSFET (mA ( 1.6 V. G1-S(B) ( 1.5 V. G1-S(B) ( 1.4 V. G1-S(B) ( 1.3 V. G1-S(B) ( 1.2 V. G1-S(B) ( 1.1 V. G1-S( (7) V G1-S( G2-S DS(A) G1-S(A) values BF1218 001aag362 (1) (2) (3) (4) (5) ( C. j © NXP B.V. 2010. All rights reserved ...

Page 13

... DS(B) G2-S DS(  k (connected Figure 3. gate1 supply voltage; typical values BF1218 001aag364 (1) (2) ( (mA C. j 001aag366 ( G1-S(A) ); see GG © NXP B.V. 2010. All rights reserved. ...

Page 14

... DS(B) DS(A) G1-S( k (connected see G1 GG gate2 voltage; typical values BF1218 001aag368 (1) (2) (3) (4) ( (V) G2 C; j Figure 3. © NXP B.V. 2010. All rights reserved ...

Page 15

... DS(B) GG DS( k (connected C; see T Figure 34. amb reduction; typical values BF1218 001aag370 G1-S( MHz; w Figure 34. 001aag372 G1-S( MHz; © NXP B.V. 2010. All rights reserved ...

Page 16

... DS(B) G2-S DS( D(B) frequency; typical values BF1218 001aag374 −10 2 ϕ fs (deg) −10 − (MHz G1-S(A) 001aag376 (MHz G1-S(A) © NXP B.V. 2010. All rights reserved ...

Page 17

... typical values; G1-S(A) amb r (degree) 22.83 0.66 46.42 0.64 © NXP B.V. 2010. All rights reserved. BF1218 Angle (degree) 1.40 2.88 5.77 8.61 11.43 14.26 17.16 20.05 22.93 25.77 28.64 ( ...

Page 18

... Ω All information provided in this document is subject to legal disclaimers. Rev. 01 — 14 April 2010 BF1218 Dual N-channel dual gate MOSFET V DS( 2.2 μH 4 Ω BF1218 DB L2 2.2 μH 4 DS(A) 5V 001aak331 V DS( 2.2 μ 4 2.2 μH 50 Ω ...

Page 19

... All information provided in this document is subject to legal disclaimers. Rev. 01 — 14 April 2010 Dual N-channel dual gate MOSFET detail 0.45 0.25 0.2 0.2 0.1 0.15 0.15 EUROPEAN PROJECTION BF1218 SOT363 ISSUE DATE 04-11-08 06-03-16 © NXP B.V. 2010. All rights reserved ...

Page 20

... Metal-Oxide Semiconductor Field-Effect Transistor Ultra High Frequency Very High Frequency Data sheet status Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 14 April 2010 BF1218 Dual N-channel dual gate MOSFET Change notice Supersedes - - © NXP B.V. 2010. All rights reserved. ...

Page 21

... NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. All information provided in this document is subject to legal disclaimers. Rev. 01 — 14 April 2010 BF1218 Dual N-channel dual gate MOSFET © NXP B.V. 2010. All rights reserved ...

Page 22

... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 01 — 14 April 2010 BF1218 Dual N-channel dual gate MOSFET © NXP B.V. 2010. All rights reserved ...

Page 23

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BF1218 All rights reserved. Date of release: 14 April 2010 Document identifier: BF1218_1 ...

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