BF1211WR NXP Semiconductors, BF1211WR Datasheet - Page 4
![Enhancement type N-channel Field-Effect Transistor in a plastic SOT143B package](/photos/41/53/415378/sot343r_3d_sml.gif)
BF1211WR
Manufacturer Part Number
BF1211WR
Description
Enhancement type N-channel Field-Effect Transistor in a plastic SOT143B package
Manufacturer
NXP Semiconductors
Datasheet
1.BF1211.pdf
(16 pages)
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Price
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NXP Semiconductors
STATIC CHARACTERISTICS
T
Note
1. R
2003 Dec 16
handbook, halfpage
V
V
V
V
V
V
V
I
I
I
SYMBOL
j
DSX
G1-S
G2-S
= 25 C unless otherwise specified.
(BR)DSS
(BR)G1-SS
(BR)G2-SS
(F)S-G1
(F)S-G2
G1-S(th)
G2-S(th)
N-channel dual-gate MOS-FETs
(mW)
(1) BF1211WR.
(2) BF1211; BF1211R.
P tot
G1
250
200
150
100
50
0
connects G
0
drain-source breakdown voltage
gate 1-source breakdown voltage
gate 2-source breakdown voltage
forward source-gate 1 voltage
forward source-gate 2 voltage
gate 1-source threshold voltage
gate 2-source threshold voltage
drain-source current
gate 1 cut-off current
gate 2 cut-off current
Fig.4 Power derating curve.
50
1
to V
PARAMETER
GG
100
= 5 V.
(2)
(1)
150
T s (°C)
MDB828
200
V
V
V
V
V
V
V
V
note 1
V
V
G1-S
G2-S
G1-S
G2-S
G1-S
G2-S
G1-S
G2-S
G2-S
G1-S
= V
= V
= V
= V
= V
= 4 V; V
= 5 V; V
= 4 V; V
= V
= V
4
G2-S
DS
DS
DS
DS
DS
DS
= 0 V; I
= 0 V; I
= 0 V; I
= 0 V; I
= 0 V; V
= 0 V; V
CONDITIONS
= 0 V; I
DS
DS
DS
= 5 V; I
= 5 V; I
= 5 V; R
BF1211; BF1211R; BF1211WR
G1-S
G2-S
S-G1
S-G2
G1-S
G2-S
D
= 10 A
= 10 mA
= 10 mA
= 10 mA
= 10 mA
D
D
= 5 V
= 4 V
G1
= 100 A
= 100 A
= 75 k;
6
6
6
0.5
0.5
0.3
0.35
11
MIN.
Product specification
10
10
1.5
1.5
1
1
19
50
20
MAX.
V
V
V
V
V
V
V
mA
nA
nA
UNIT