BF1202 NXP Semiconductors, BF1202 Datasheet - Page 5
![Enhancement type Field-Effect Transistor in a plastic SOT143B package](/photos/41/52/415249/sot143b_3d_sml.gif)
BF1202
Manufacturer Part Number
BF1202
Description
Enhancement type Field-Effect Transistor in a plastic SOT143B package
Manufacturer
NXP Semiconductors
Datasheet
1.BF1202.pdf
(15 pages)
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NXP Semiconductors
2010 Sep 16
handbook, halfpage
handbook, halfpage
N-channel dual-gate PoLo MOS-FETs
V
T
V
V
T
T
Fig.7
j
j
j
DS
DS
DS
= 25 C.
= 25 C.
= 25 C.
(mA)
(μA)
I G1
Fig.5 Transfer characteristics; typical values.
I D
100
= 5 V.
= 5 V.
= 5 V.
20
16
12
80
60
40
20
8
4
0
0
0
0
Gate 1 current as a function of gate 1
voltage; typical values.
0.4
0.5
0.8
1
V G2-S = 4 V
V G2-S = 4 V
3.5 V
3 V
1.2
1.5
3.5 V
1.6
2
V G1-S (V)
V G1-S (V)
1.5 V
1 V
2 V
3 V
2 V
1 V
2.5 V
1.5 V
2.5 V
MCD952
MCD954
2.5
2
5
handbook, halfpage
handbook, halfpage
V
T
V
T
Fig.8
G2-S
j
DS
j
(mA)
= 25 C.
(mS)
= 25 C.
y fs
I D
= 5 V.
Fig.6 Output characteristics; typical values.
24
16
40
30
20
10
BF1202; BF1202R; BF1202WR
= 4 V.
8
0
0
0
0
Forward transfer admittance as a function
of drain current; typical values.
2
4
4
8
V G2-S = 4 V
12
6
V G1-S = 1.5 V
Product specification
16
8
V DS (V)
3 V
3.5 V
2 V
2.5 V
I D (mA)
MCD953
MCD955
1.4 V
1.3 V
1.2 V
1.1 V
1 V
0.9 V
10
20