BF1105 NXP Semiconductors, BF1105 Datasheet - Page 3
![Enhancement type N-channel Field-Effect Transistor](/photos/41/52/415249/sot143b_3d_sml.gif)
BF1105
Manufacturer Part Number
BF1105
Description
Enhancement type N-channel Field-Effect Transistor
Manufacturer
NXP Semiconductors
Datasheet
1.BF1105.pdf
(15 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
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Part Number:
BF1105
Manufacturer:
NXP
Quantity:
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Part Number:
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philips
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Part Number:
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Company:
Part Number:
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Manufacturer:
NXP
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Part Number:
BF1105WR
Manufacturer:
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NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on a printed-circuit board.
1997 Dec 02
handbook, halfpage
V
I
I
I
P
T
T
SYMBOL
D
G1
G2
stg
j
DS
tot
N-channel dual-gate MOS-FETs
(mW)
P tot
250
200
150
100
50
0
0
drain-source voltage
drain current
gate 1 current
gate 2 current
total power dissipation
storage temperature
operating junction temperature
Fig.4 Power derating curve.
40
PARAMETER
80
120
T amb (°C)
MGM243
160
T
amb
80 C; note 1; see Fig.4
3
CONDITIONS
BF1105; BF1105R; BF1105WR
65
MIN.
7
30
10
10
200
+150
+150
Product specification
MAX.
V
mA
mA
mA
mW
C
C
UNIT