BF1102R NXP Semiconductors, BF1102R Datasheet

Enhancement type Field-Effect Transistor in a plastic SOT363 package

BF1102R

Manufacturer Part Number
BF1102R
Description
Enhancement type Field-Effect Transistor in a plastic SOT363 package
Manufacturer
NXP Semiconductors
Datasheet

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Part Number:
BF1102R
Manufacturer:
NXP
Quantity:
24 000
Part Number:
BF1102R
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Product specification
Supersedes data of 1999 Jul 01
dbook, halfpage
DATA SHEET
BF1102; BF1102R
Dual N-channel dual gate
MOS-FETs
DISCRETE SEMICONDUCTORS
MBD128
2000 Apr 11

Related parts for BF1102R

BF1102R Summary of contents

Page 1

... DATA SHEET dbook, halfpage BF1102; BF1102R Dual N-channel dual gate MOS-FETs Product specification Supersedes data of 1999 Jul 01 DISCRETE SEMICONDUCTORS MBD128 2000 Apr 11 ...

Page 2

... DESCRIPTION The BF1102 and BF1102R are both two equal dual gate MOS-FETs which have a shared source pin and a shared gate 2 pin. Both devices have interconnected source and substrate; an internal bias circuit enables DC stabilization and a very good cross-modulation performance supply voltage ...

Page 3

... Fig.2 Power derating curve. 2000 Apr 11 CONDITIONS  102  PARAMETER MGS359 150 200 T s (°C) 3 Product specification BF1102; BF1102R MIN. MAX. UNIT    10 mA  10 mA  200 mW 65 C +150  ...

Page 4

... MHz MHz; (note MHz MHz f = 800 MHz MHz MHz; (note 3) w unw input level for AGC input level for AGC = BF1102; BF1102R CONDITIONS = 10  G1 G2 0.5 S- 0.5 S-G2 = 100  ...

Page 5

... Gate 1 current as a function of gate 1 voltage; typical values. 2000 Apr 11 MGS360 handbook, halfpage 2 1 1.6 2.0 2.4 V G1-S (V) MGS362 handbook, halfpage 3 2 1.5 2 2.5 V G1-S (V) 5 BF1102; BF1102R G1-S = 1.5 V (mA) 1 1  Fig.4 Output characteristics; typical values. ...

Page 6

... I G1 (μA) MGS366 68 kΩ handbook, halfpage 82 kΩ 100 kΩ 120 kΩ 150 kΩ 180 kΩ 220 kΩ ( BF1102; BF1102R (mA  G2 120 k (connected ...

Page 7

... MGS368 handbook, halfpage reduction G2-S (V) MGS369 handbook, halfpage 40 60 gain reduction (dB  MHz; T amb 7 BF1102; BF1102R 0 gain (dB) −10 −20 −30 −40 −  MHz amb R = 120 k (connected ...

Page 8

... D Fig.16 Reverse transfer admittance and phase as MGS372 2 10 handbook, halfpage − ϕ fs (deg) ϕ (MHz Fig.18 Output admittance as a function of 8 BF1102; BF1102R (mS) ϕ  mA; T amb a function of frequency ...

Page 9

... R GEN 50 Ω Fig.20 Cross-modulation test set-up (for one MOS-FET). 2000 Apr 11 MCD972 600 800 1000 f (MHz mA AGC R1 10 kΩ Ω Product specification BF1102; BF1102R C3 4 ≈ 2.2 μH 50 Ω DUT C4 4 MGS315 ...

Page 10

... mA; T G2-S D amb F min (dB) (ratio) 2 0.621 10 Product specification BF1102; BF1102R = 25 C amb s 12 ANGLE MAGNITUDE (ratio) (deg) (ratio) 0.001 95.4 0.986 0.002 81.3 0.983 0.005 75.8 0.976 0.006 69.6 0.960 0.007 65.6 0.945 0.007 64.4 0.928 ...

Page 11

... VERSION IEC SOT363 2000 Apr scale 2.2 1.35 2.2 1.3 0.65 1.8 1.15 2.0 REFERENCES JEDEC JEITA SC-88 11 BF1102; BF1102R detail 0.45 0.25 0.2 0.2 0.1 0.15 0.15 EUROPEAN PROJECTION Product specification SOT363 ISSUE DATE 04-11-08 06-03-16 ...

Page 12

... Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. 12 Product specification BF1102; BF1102R DEFINITION ...

Page 13

... Apr 11 BF1102; BF1102R Export control  This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data  ...

Page 14

... Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. ...

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